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參數(shù)資料
| 型號(hào)： | JANSF2N7422U |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 97K |
| 代理商： | JANSF2N7422U |
IRHN9150, IRHN93150, JANSR-,JANSF-,2N7422U Devices
www.irf.com
3
Table 1. Low Dose Rate
Parameter
IRHN9150 IRHN93150
100K Rads (Si) 300K Rads (Si)
Units
Min
Max
Min
-100
—
-100
-2.0
-4.0
-2.0
—
-100
—
—
100
—
—
-25
—
—
0.080
—
Test Conditions
Max
—
-5.0
-100
100
-25
0.080
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= -12V, I
D
= -14A
nA
μA
V
SD
—
-3.0
—
-3.0
V
TC = 25°C, IS = -22A,V
GS
= 0V
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
-80
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
Test Conditions
V
DSS
-80
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
-160 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
-100
—
—
—
-800
—
—
—
0.5
100
—
—
—
A
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Ni 28
1x 10
5
~41 -100
5
Table 3. Single Event Effects
International Rectifier Radiation Hardened HEXFETs are
tested to verify their hardness capability. The hardness
assurance program at International Rectifier com prises
three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test method
1019 condition A. International Rectifier has imposed
a standard gate condition of -12 volts per note 5 and a
V
bias condition equal to 80% of the device rated volt-
age per note 6. Pre- and post- irradiation limits of the
devices irradiated to 1 x 10
5
Rads (Si) are identical and
are presented in Table1, column1, IRHN9150. Post-ir-
radiation limits of the devices irradiated to 3 x 10
5
Rads (Si) are presented in Table 1, column 2,
IRHN93150. The values in Table 1 will be met for
either of the two low dose rate test circuits that are
used. Both pre- and post-irradiation performance
Radiation Performance of Rad Hard HEXFETs
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison. It should be noted that at a radiation level of
3 x 10
5
Rads (Si) the only parametric limit change is
V
GS(th)
maximum.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See Table 2). International Rectifier radia-
tion hardened P-Channel HEXFETs are considered
to be neutron-tolerant, as stated in MIL-PRF-19500
Group D.
International Rectifier radiation hardened P-Channel
HEXFETs have been characterized in heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
Radiation
Characteristics
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