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參數(shù)資料
| 型號： | JANSF2N7382 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 121K |
| 代理商： | JANSF2N7382 |
IRHY9130CM, IRHY93130CM Device
Pre-Radiation
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = -25V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL
Peak IL = -11A, VGS = -12V, 25
≤
RG
≤
200
ISD
≤
-11A, di/dt
≤
-440A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG = 7.5
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
K/W = °C/W
W/K = W/°C
2
) ]
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process characterized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions — TO 257AA
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
10/97
PIN ASSIGNMENT
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
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相關代理商/技術參數(shù) |
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|---|---|
| JANSF2N7382U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7383 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7389 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.5A 3PIN TO-39 - Rail/Tube 制造商:Microsemi Corporation 功能描述:JANSF2N7389 - Waffle Pack |
| JANSF2N7389/DPA/BALL | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.5A 3PIN TO-39 - Virtual or Non-Physical Inventory (Software & Literature) |
| JANSF2N7389U | 制造商:International Rectifier 功能描述:100V 6.000A HEXFET RADHARD - Rail/Tube 制造商:Microsemi Corporation 功能描述:RADIATION HARDENED N-CHANNEL MOSFET - Waffle Pack |
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