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參數(shù)資料
| 型號(hào)： | JANS2N6849U |
| 英文描述： | -100V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package |
| 中文描述： | - 100V的單P溝道高可靠性的18 MOSFET的引腳LCC封裝 |
| 文件頁(yè)數(shù)： | 6/21頁(yè) |
| 文件大?。?/td> | 137K |
| 代理商： | JANS2N6849U |
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MIL-PRF-19500/368F
14
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Collector to base cutoff
current
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3036
Bias condition D
VCB = 450 V dc
VCB = 300 V dc
ICBO2
5
A dc
Base emitter voltage
(nonsaturated)
3066
Test condition A, pulsed (see 4.5.1),
IC = 50 mA dc, IB = 4 mA dc
VBE(sat)
1.3
V dc
Collector to emitter voltage
(saturated)
3071
Pulsed (see 4.5.1), IC = 50 mA dc,
IB = 4 mA dc
VCE(sat)
0.5
V dc
Forward-current transfer
ratio
3076
Pulsed (see 4.5.1), VCE = 10 V dc,
IC = 20 mA
hFE1
40
160
Forward-current transfer
ratio
3076
Pulsed (see 4.5.1), VCE = 10 V dc,
IC = 2 mA
hFE2
30
Forward-current transfer
ratio
3076
Pulsed (see 4.5.1), VCE = 10 V dc,
IC = 0.2 mA
hFE3
10
Subgroup 3
High temperature
operation:
TA = +150°C
Collector to emitter cutoff
current
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3036
Bias condition D
VCB = 360 V dc
VCB = 250 V dc
ICB03
100
A dc
Low temperature operation:
TA = -55
°C
Forward-current transfer ratio
3076
VCE = 10 V dc, IC = 20 mA dc,
pulsed (see 4.5.1)
hFE4
15
Subgroup 4
Pulse response:
3251
Test condition A
Turn-on time
VCC = 200 V dc, IC = 20 mA dc,
IB1 = 2 mA dc, see figure 5
ton
1
s
Turn-off time
VCC = 200 V dc, IC = 20 mA dc,
IB1 = -IB2 = 2 mA dc, see figure 5
toff
10
s
See footnotes at end of table.
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