- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299238 > JANS2N3749 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 PDF資料下載
參數(shù)資料
| 型號： | JANS2N3749 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 5A條一（c）|至111 |
| 文件頁數(shù)： | 2/20頁 |
| 文件大?。?/td> | 128K |
| 代理商： | JANS2N3749 |
MIL-PRF-19500/560E
10
4.3 Screening (JAN, JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
Measurements
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
*
3C
Thermal impedance method 3131 of
MIL-STD-750.
Thermal impedance method 3131 of
MIL-STD-750.
9
ICBO1 and hFE2
Not applicable
11
ICBO1; hFE2,
I
CBO1 = ± 100 percent of initial value
or 1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent
ICBO1 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
I
CBO1 = ± 100 percent of initial value
or 1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent
Subgroup 2 of table I herein;
I
CBO1 = ± 100 percent of initial value or
1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in the
general requirements of 4.5 of MIL-STD-750. Power shall be applied to the device to achieve TJ = minimum 175°C
and minimum power dissipation of PD = 75 percent PT max as defined in 1.3.
* 4.3.2 Screening for JANHC and JANKC. Screening for JANHC and JANKC die shall be in accordance with
MIL-PRF-19500 Discrete Semiconductor Die/Chip Lot Acceptance. Burn-in duration for JANKC level follows JANS
requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500
and table I herein. Electrical measurements (end-points) requirements shall be in accordance with group A,
subgroup 2 herein.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANS2N3996 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| JANS2N3997 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| JANS2N3998 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA |
| JANS2N3999 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA |
| JANS2N6851U | -200V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANS2N3763 | 功能描述:TRANS PNP 60V 1.5A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/396 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:1.5A 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:900mV @ 100mA，1A 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:20 @ 1A，1.5V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-55°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:TO-205AD，TO-39-3 金屬罐 供應商器件封裝:TO-39（TO-205AD） 標準包裝:1 |
| JANS2N3810 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
| JANS2N3810L | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
| JANS2N3810U | 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
| JANS2N3811 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
發(fā)布緊急采購，3分鐘左右您將得到回復。