- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299237 > JANS2N2857 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 40MA I(C) | TO-72 PDF資料下載
參數(shù)資料
| 型號(hào)： | JANS2N2857 |
| 英文描述： | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 40MA I(C) | TO-72 |
| 中文描述： | 晶體管|晶體管|叩| 15V的五（巴西）總裁| 40MA一（c）|至72 |
| 文件頁數(shù)： | 2/20頁 |
| 文件大?。?/td> | 128K |
| 代理商： | JANS2N2857 |
MIL-PRF-19500/560E
10
4.3 Screening (JAN, JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
Measurements
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
*
3C
Thermal impedance method 3131 of
MIL-STD-750.
Thermal impedance method 3131 of
MIL-STD-750.
9
ICBO1 and hFE2
Not applicable
11
ICBO1; hFE2,
I
CBO1 = ± 100 percent of initial value
or 1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent
ICBO1 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
I
CBO1 = ± 100 percent of initial value
or 1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent
Subgroup 2 of table I herein;
I
CBO1 = ± 100 percent of initial value or
1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in the
general requirements of 4.5 of MIL-STD-750. Power shall be applied to the device to achieve TJ = minimum 175°C
and minimum power dissipation of PD = 75 percent PT max as defined in 1.3.
* 4.3.2 Screening for JANHC and JANKC. Screening for JANHC and JANKC die shall be in accordance with
MIL-PRF-19500 Discrete Semiconductor Die/Chip Lot Acceptance. Burn-in duration for JANKC level follows JANS
requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500
and table I herein. Electrical measurements (end-points) requirements shall be in accordance with group A,
subgroup 2 herein.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANS2N2857UB | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 40MA I(C) | LLCC |
| JANS2N2880 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA |
| JANS2N3506 | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-5 |
| JANS2N3506A | BJT |
| JANS2N3506AL | BJT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANS2N2857UB | 制造商:Microsemi Corporation 功能描述:NPN Transistor 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Gel-pak, waffle pack, wafer, diced wafer on film |
| JANS2N2904 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N2904A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| JANS2N2904AL | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.6A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| JANS2N2905 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。