參數(shù)資料
型號: JANS2N2222AUB
英文描述: TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
中文描述: 晶體管|晶體管|叩| 40V的五(巴西)總裁| 800mA的一(c)|貼片
文件頁數(shù): 2/23頁
文件大?。?/td> 135K
代理商: JANS2N2222AUB
MIL-PRF-19500/545D
10
4.3. Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see table IV
of MIL-PRF-19500
JANS levels
JANTX and JANTXV levels
1a
Not required
1b
Required
Required for JANTXV only
2
Optional
3a
Required
3b
Not applicable
3c
Thermal response (see 4.5.3)
4
Required
Optional
5
Required
Not applicable
7a and 7b
Required
8
Required
Not required
9
ICES1 and hFE2
Not applicable
10
48 hours minimum
11
ICES1 and hFE2; ICES1 = 100 percent of
initial value or100 nA dc, whichever is
greater.
hFE2 = ± 20 percent.
ICES1 and hFE2
12
See 4.3.2
13
Subgroup 2 of table I herein;
ICES1 = 100 percent of initial value or
100 nA dc, whichever is greater.
hFE2 = ± 20 percent.
Subgroup 2 of table I herein;
ICES1 = 100 percent of initial value or
100 nA dc, whichever is greater.
hFE2 = ± 20 percent.
14a and 14b
Optional
15
Required
Not required
16
Required
Not required
4.3.1. Screening (JANHC and JANKC). Screening of JANC die shall be in accordance with MIL-PRF-19500.
Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements.
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