參數(shù)資料
型號: JANS2N2221AUA
英文描述: TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
中文描述: 晶體管|晶體管|叩| 40V的五(巴西)總裁| 800mA的一(c)|貼片
文件頁數(shù): 6/23頁
文件大?。?/td> 135K
代理商: JANS2N2221AUA
MIL-PRF-19500/545D
14
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical 3/
examination
2071
n = 45 devices, c = 0
Solderability 3/, 4/
Resistance to solvents
3/, 4/, 5/
2026
1022
n = 15 leads, c = 0
n = 15 devices, c = 0
Temp cycling 3/, 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements
4/
Group A, subgroup 2
Bond strength 3/, 4/
2037
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Subgroup 2
Breakdown voltage,
collector to emitter
3011
Bias condition D, IC = 100 mA
dc; IB = 0, pulsed (see 4.5.1)
V(BR)CEO
80
V dc
Collector to emitter cutoff
current
3041
Bias condition C, VCE = 60 V dc;
VBE = 0
ICES1
1.0
A dc
Collector to emitter cutoff
current
3041
Bias condition C, VCE = 100 V
dc; VBE = 0
ICES2
1.0
mA dc
Collector to emitter cutoff
current
3041
Bias condition D, VCE = 40 V dc;
IB = 0
ICEO
50
A dc
Emitter to base cutoff
current
3061
Bias condition D, VEB = 4 V dc;
IC = 0
IEBO1
1.0
A dc
Emitter to base cutoff
current
3061
Bias condition D, VEB = 5.5 V dc;
IC = 0
IEBO2
1.0
mA dc
See footnote at end of table.
相關(guān)PDF資料
PDF描述
JANS2N2221AUB TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | CHIP
JANS2N2222A TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-18
JANS2N2222AL TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 800MA I(C) | TO-206AA
JANS2N2222AUA TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
JANS2N2222AUB TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SMT
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