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參數(shù)資料
| 型號： | JANS2N2221AL |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 800MA I(C) | TO-206AA |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 800mA的一（c）|至206AA |
| 文件頁數(shù)： | 5/23頁 |
| 文件大?。?/td> | 135K |
| 代理商： | JANS2N2221AL |
MIL-PRF-19500/545D
13
4.5.2. Thermal resistance. Thermal resistance measurements shall be conducted in accordance with
method 3131 of MIL-STD-750. The following details shall apply:
a.
Collector current magnitude during power application shall be 500 mA minimum dc.
b.
Collector to emitter voltage magnitude shall be 10 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference temperature measuring point shall be within the range +25
°C ≤ T
R ≤ +35°C. The chosen
reference temperature shall be recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to case.
f.
Maximum limit of RθJC shall be 15.0°C/W for (TO-205) and 1.75°C/W for (U3).
4.5.3. Thermal response (VBE measurements). The
V
BE measurements shall be performed in accordance
with method 3131 of MIL-STD-750. The
V
BE conditions (IH and VH) and maximum limit shall be derived by each
vendor. The chosen
V
BE measurement and conditions for each device in the qualification lot shall be submitted in
the qualification report and a thermal response curve shall be plotted. The chosen
V
BE shall be considered final
after the manufacturer has had the opportunity to test five consecutive lots. One-hundred percent safe operating
area (SOA) testing may be performed in lieu of thermal response testing herein provided that the appropriate
conditions of temperature, time, current, and voltage to achieve die attach integrity are approved by the qualifying
activity. The following parameter measurements shall apply:
a. IM measurement ......................................................................... 10 mA.
b. VCE measurement voltage ......................................................... 16 V (same as VH).
c. IH collector heating current ......................................................... 1 A minimum.
d. VH collector-emitter heating voltage ........................................... 16 V minimum.
e. tH heating time ............................................................................ 10 ms.
f. tMD measurement delay time ...................................................... 50 s.
g. tSW sample window time ............................................................ 10 s maximum.
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| JANS2N2221AL R- 100K RADS (SI) | 制造商:Microsemi Corporation 功能描述:JANS2N2221AL R- 100K RADS (SI) - Waffle Pack |
| JANS2N2221AUA | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 4-Pin UA 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack |
| JANS2N2221AUB | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin UB 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack |
| JANS2N2221AUBC | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack |
| JANS2N2222A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin TO-18 制造商:Microsemi 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin TO-18 |
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