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參數(shù)資料
| 型號(hào)： | JANHCA2N6792 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-39 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直|甲（?。﹟ TO - 39封裝 |
| 文件頁(yè)數(shù)： | 9/23頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | JANHCA2N6792 |
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MIL-PRF-19500/545D
17
TABLE I, Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 5
Safe operating area (D.C.)
3051
Pre-pulse condition for each test:
VCE = 0; IC = 0; TC = +25°C
Pulse condition for each test:
tp = 1 sec. 1 cycle. TC = +25°C,
(see figure 8)
Test # 1
V
CE = 5.0 V dc, IC = 2 A dc for
TO39/5
V
CE = 5.8 V dc, IC = 2 A dc for
U3, unheatsunk (see note 3) or
TBD
Test # 2
V
CE = 32 V dc, IC = 310 mA dc
for TO39/5
V
CE = 32 V dc, IC = 360 mA dc
for U3, unheatsunk (see note 3)
or TBD
Test # 3
V
CE = 80 V dc, IC = 12.5 mA dc
for TO39/5
V
CE = 80 V dc, IC = 14.5 mA dc
for U3, unheatsunk (see note 3)
or TBD
Safe operating area
(unclamped inductive)
TC = +25°C; RBB1 = 10 ;
RBB2 = 100 ; L = 0.3 mH;
RL = 0.1
; VCC = 10 V dc;
VBB1 = 10 V dc; VBB2 = 4 V dc;
ICM = 10 A dc (see figure 6)
End point electrical
measurements
See table I, Subgroup 2
Subgroups 6 and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in
group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
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