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MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
725 E.Walnut St., Garland, TX 75040
(972) 272-3571
Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
3 - 14
4N47
4N48
JAN, JANTX, JANTXV,
SINGLE CHANNEL OPTOCOUPLERS
4N49
Mii
OPTOELECTRONIC
PRODUCTS{PRIVATE }
DIVISION
Features:
High Reliability
Base lead provided for conventional transistor
biasing
Rugged package
High gain, high voltage transistor
+1kV electrical isolation
Applications:
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed TO-5 metal can. The
4N47
,
4N48
and
4N49
’s can be tested to customer specifications, as well as to MIL-PRF-19500
JAN, JANTX, JANTXV and JANS quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage.............................................................................................................................................................1kV
Emitter-Collector Voltage............................................................................................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero)............................40V
Collector-Base Voltage.............................................................................................................................................................45V
Reverse Input Voltage ...............................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)......................................40mA
Peak Forward Input Current (Value applies for tw
<
1
μ
s, PRR
<
300 pps) ...............................................................................1A
Continuous Collector Current................................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW
Storage Temperature........................................................................................................................................... -65°C to +125°C
Operating Free-Air Temperature Range............................................................................................................. -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds)................................................................................240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
*JEDEC registered data
Package Dimensions Schematic Diagram
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
6 LEADS
0.016 [0.41]
0.019[0.48]
1
2
3
5
6
7
0.335 [8.51]
0.305 [7.75]
MIN.
0.040 [1.02]
MAX.
0.500 [12.70]
0.155 [3.94]
0.185 [4.70]
0.045 [1.14]
0.029 [0.73]
0.034 [0.864]
0.028 [0.711]
45°
3
5
E
B
K
7
2
1
C
A
0.022 [5.08]