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參數(shù)資料
| 型號(hào)： | JAN1N5622EG1 |
| 廠商： | GENERAL SEMICONDUCTOR INC |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | JAN1N5622EG1 |
JAN and JANTX 1N5614EG1 thru 1N5622EG1
Vishay Semiconductors
formerly
www.vishay.com
Document Number 88653
2
6-Mar-02
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
25
50
75
100
125
150
175
0
0.25
0.5
0.75
1.0
1
10
100
1
10
30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
10
1
0
20
40
60
80
100
0.01
0.1
1
10
Fig. 1 – Forward Current
Derating Curve
Fig. 2 – Typical Instantaneous
Forward Characteristics
Fig. 3 – Typical Reverse
Characteristics
Fig. 4 – Typical Junction
Capacitance
Average
Forward
Rectified
Current
(A)
Ambient Temperature (C)
Instantaneous
Forward
Current
(A)
Instantaneous Forward Voltage (V)
Junction
Capacitance
(pF)
Reverse Voltage (V)
Instantaneous
Reverse
Current
(
A)
Rated Peak Reverse Voltage (%)
60 Hz Resistive
or Inductive Load
0.375" (9.5mm)
Lead length
Pulse Width = 300
s
1% Duty Cycle
TJ = 25
°C
TJ = 150
°C
TJ = 125
°C
TJ = 25
°C
TJ = 75
°C
TJ = 25
°C
f = 1.0 MHz
Vsig = 50m Vp-p
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