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參數(shù)資料
| 型號： | JAN1N5614EG1 |
| 廠商： | GENERAL SEMICONDUCTOR INC |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 65K |
| 代理商： | JAN1N5614EG1 |
JAN and JANTX 1N5614EG1 thru 1N5622EG1
Vishay Semiconductors
Document Number 88653
www.vishay.com
6-Mar-02
1
Patented*
Glass Passivated Rectifiers
Reverse Voltage 200 to 1000V
Forward Current 1.0A
formerly
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Prefix J = JAN Quality Level; Prefix JX = JANTX Quality Level
Unit
J,JX 1N5614 J,JX 1N5616 J,JX 1N5618 J,JX 1N5620 J,JX 1N5622
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
200
400
600
800
1000
V
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA = 55
°C
IF(AV)
1.0
A
Peak forward surge current 10 surges of 8.3ms each at
1 min. intervals super-imposed on IO = 750mA DC;
IFSM
25
A
VR = rated VRRM TA = 100°C (per MIL-STD-750 m 4066)
Typical thermal resistance(1)
R
θJL
38
°C/W
R
θJA
45
Operating junction and storage temperature range
TJ,TSTG
–65 to +175
°C
Barometric Pressure
Hg
8
33
mm
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Minimum reverse breakdown voltage at 50
AVBR
220
440
660
880
1100
V
Maximum instantaneous
at 1.0A
VF
1.1
V
forward voltage Tp = 300
s
at 3.0A
1.3
Maximum DC reverse current
TA = 25
°C
IR
0.5
A
at rated DC blocking voltage
TA = 100
°C25
Maximum reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
2.0
s
Maximum junction capacitance at 4V, 1MHz
CJ
15
pF
Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Features
Qualified to MIL-PRF-19500/427
Class 1 high temperature metallurgically bonded
construction brazed > 600°C
1.0 ampere operation at TA = 55°C with no thermal runaway
Typical IR less than 0.1
A
Cavity-free, glass passivated junction. In epoxy over
hermetic glass
High temperature soldering guaranteed: 350°C/10 seconds,
0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case: DO-204AL, molded epoxy over glass body (EG1)
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any Weight: 0.015oz., 0.4g
Flammability: Epoxy is rated UL 94V-0.
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
DIA.
* Glass-plastic encapsulation technique is covered by Patent No. 3,996,602
and brazed-lead assembly by Patent No. 3,930,306
DO-204AL (EG1)
Dimensions
in inches and
(millimeters)
M
IL
I T
A
R Y
Q UA
L I
F
IE
D
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| JAN1N5616EG1 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL |
| JAN1N5619 | 1 A, SILICON, SIGNAL DIODE |
| JANTX1N5619 | 1 A, SILICON, SIGNAL DIODE |
| JAN1N5711UB | 0.033 A, SILICON, SIGNAL DIODE |
| JANTX1N5712UB | 0.075 A, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN1N5614US | 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SWITCHING 200V 1A 2-PIN A-MELF |
| JAN1N5615 | 制造商:Microsemi Corporation 功能描述:Diode Switching 200V 1A 2-Pin Case A 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) (FR) - Bulk 制造商:Microsemi 功能描述:Diode Switching 200V 1A 2-Pin Case A |
| JAN1N5615US | 制造商:Microsemi Corporation 功能描述:Diode Switching 200V 1A 2-Pin A-MELF 制造商:Microsemi Corporation 功能描述:FAST RECTIFIER (100-500NS) (FR) - Bulk |
| JAN1N5616 | 制造商:Microsemi Corporation 功能描述:Diode Switching 400V 1A 2-Pin Case A 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk |
| JAN1N5616US | 制造商:Microsemi Corporation 功能描述:Diode Switching 400V 1A 2-Pin A-MELF 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk 制造商:Microsemi 功能描述:Diode Switching 400V 1A 2-Pin A-MELF |
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