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參數(shù)資料
| 型號： | IXGA16N60C2 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFASTTM IGBT C2-Class High Speed IGBT |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 535K |
| 代理商： | IXGA16N60C2 |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGP 16N60C2 IXGA 16N60C2D1
IXGA 16N60C2 IXGA 16N60C2D1
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Reverse Diode (FRED)
(T
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
min. typ. max.
V
F
I
F
= 10 A, V
GE
= 0 V
T
J
= 125
°
C
I
F
= 12 A; -di
F
/dt = 100 A/
μ
s, V
R
= 100 V
V
GE
= 0 V; T
J
= 125
°
C
I
F
= 1 A; -di
F
/dt = 100 A/
μ
s; V
R
= 30 V, V
GE
= 0 V
2.66
1.66
V
I
RM
t
rr
2.5
110
A
ns
t
rr
30
ns
R
thJC
2.5 K/W
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Note 2.
= 12A; V
CE
= 10 V,
8
12
S
C
ies
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
16N60C2
16N60C2D1
720
pF
55
65
pF
pF
C
res
19
pF
Q
g
Q
ge
Q
gc
I
C
= 20A, V
GE
= 15 V, V
CE
= 0.5 V
CES
32
nC
6
nC
10
nC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
25
ns
15
ns
60
120
ns
35
ns
μ
J
60
100
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
25
ns
18
ns
16N60C2D1
0.38
mJ
120
ns
70
ns
μ
J
150
R
thJC
R
thCK
0.83 K/W
(IXGP)
0.5
K/W
Inductive load, T
J
= 125
°
C
I
C
= 12A; V
GE
= 15 V
V
CE
= 400 V; R
G
= R
off
= 22
Note 1
Inductive load, T
J
= 25
°
C
I
C
= 12 A; V
GE
= 15 V
V
= 400 V; R
G
= R
off
= 22
Note 1.
Notes:
1. Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
,
or increased R
G
.
2. Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
Pins:
1 - Gate
3 - Emitter
2 - Collector
4 - Collector
TO-220 Outline
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
TO-263 Outline
相關(guān)PDF資料 |
PDF描述 |
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| IXGA16N60C2D1 | HiPerFASTTM IGBT C2-Class High Speed IGBT |
| IXGP16N60C2 | HiPerFASTTM IGBT C2-Class High Speed IGBT |
| IXGP16N60C2D1 | HiPerFASTTM IGBT C2-Class High Speed IGBT |
| IXGA7N60B | HiPerFAST IGBT(VCES為600V，VCE(sat)為1.5V的HiPerFAST絕緣柵雙極晶體管) |
| IXGA7N60C | Lightspeed Series HiPerFAST IGBT(VCES為600V，VCE(sat)為2.0V的HiPerFAST絕緣柵雙極晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGA16N60C2_10 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBTs C2-Class High Speed |
| IXGA16N60C2D1 | 功能描述:IGBT 晶體管 16 Amps 600V 3.0V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGA20N100 | 功能描述:IGBT 晶體管 40 Amps 1000V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGA20N120 | 功能描述:IGBT 晶體管 40 Amps 1200V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGA20N120A3 | 功能描述:IGBT 晶體管 G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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