參數(shù)資料
型號： IXFM10N90
廠商： IXYS CORP
元件分類： JFETs
英文描述： HIPERFET Power MOSFTETs
中文描述： 10 A, 900 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
封裝： TO-204AA, 2 PIN
文件頁數(shù)： 1/4頁
文件大小： 82K
代理商： IXFM10N90
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
20
30
V
V
T
C
= 25 C
10N100
12N100
13N100
10N100
12N100
13N100
10N100
12N100
13N100
10
12
A
A
A
A
A
A
A
A
A
12.5
40
48
50
10
12
12.5
I
DM
T
C
= 25 C, pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
dv/dt
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
30
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
1000
2.0
V
V
4.5
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
=
T
J
= 125 C
25 C
250
A
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
10N100
12N100
13N100
1.20
1.05
0.90
Pulse test, t 300 s, duty cycle d 2 %
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
G
International standard packages
G
Low R
HDMOS
TM
process
G
Rugged polysilicon gate cell structure
G
Unclamped Inductive Switching (UIS)
rated
G
Low package inductance
- easy to drive and to protect
G
Fast intrinsic Rectifier
Applications
G
DC-DC converters
G
Synchronous rectification
G
Battery chargers
G
Switched-mode and resonant-mode
power supplies
G
DC choppers
G
AC motor control
G
Temperature and lighting controls
G
Low voltage relays
Advantages
G
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
G
Space savings
G
High power density
D
G
V
DSS
1000 V
1000 V
1000 V 12.5 A 0.90
t
rr
250 ns
I
D25
10 A 1.20
12 A 1.05
R
DS(on)
IXFH/IXFM
10
N100
IXFH/IXFM
12
N100
IXFH
13
N100
HiPerFET
TM
Power MOSFETs
91531F(4/99)
IXYS reserves the right to change limits, test conditions, and dimensions.
相關PDF資料
PDF描述
IXFM12N50 HIPERFET Power MOSFTETs
IXFM12N90 HIPERFET Power MOSFTETs
IXFH10N60 HIPERFET Power MOSFTETs
IXFH10N65 HIPERFET Power MOSFTETs
IXFH13N65 HIPERFET Power MOSFTETs
相關代理商/技術參數(shù)
參數(shù)描述
IXFM11N100 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFM11N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFM11N80 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs
IXFM11N90 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFM12N100 功能描述:MOSFET 12 Amps 1000V 1.05 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*