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參數(shù)資料
| 型號(hào)： | ISPLSI2032-150LJ |
| 廠商： | LATTICE SEMICONDUCTOR CORP |
| 元件分類： | PLD |
| 英文描述： | In-System Programmable High Density PLD |
| 中文描述： | EE PLD, 8 ns, PQCC44 |
| 封裝： | PLASTIC, LCC-44 |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 153K |
| 代理商： | ISPLSI2032-150LJ |
Specifications
ispLSI 2032/A
4
4. Maximum I varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum I .
Input Pulse Levels
Table 2-0003/2032
Input Rise and Fall Time
10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
1.5V
1.5V
See Figure 2
3-state levels are measured 0.5V from
steady-state active level.
-135, -150, -180
-80, -110
≤
1.5 ns
≤
3 ns
Figure 2. Test Load
+ 5V
R1
R2
CL
*
Device
Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
0213A
Switching Test Conditions
DC Electrical Characteristics
Over Recommended Operating Conditions
Output Load Conditions (see Figure 2)
TEST CONDITION
R1
470
R2
390
390
390
CL
35pF
35pF
35pF
A
B
∞
470
Active High
Active Low
Active High to Z
at
V
OH
C
470
390
5pF
∞
390
5pF
Active Low to Z
at
V
+0.5V
OL
Table 2 - 0004A
V
OL
V
OH
I
IL
SYMBOL
1. One output at a time for a maximum duration of one second. V =
by tester ground degradation. Characterized but not 100% tested.
2. Measured using two 16-bit counters.
3. Typical values are at V = 5V and T = 25
°
C.
Table 2-0007/2032
1
I
IH
I
IL-isp
I
IL-PU
I
OS
PARAMETER
2, 4
I
CC
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
ispEN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I = -4 mA
0V
≤
V
≤
V (Max.)
IN
3.5V
≤
V
≤
V
0V
≤
V
≤
V
0V
≤
V
≤
V
V = 5V, V = 0.5V
V = 0.0V, V = 3.0V
f = 1 MHz
IN
CC
IN
IL
IN
IL
CONDITION
MIN.
–
2.4
–
TYP.
–
–
–
MAX.
0.4
–
-10
UNITS
V
V
μ
A
3
–
–
–
–
–
–
–
–
–
60
10
-150
-150
-200
–
μ
A
μ
A
μ
A
mA
mA
–
–
40
40
mA
mA
–
–
-180, -150
Others
Comm.
ndustrial
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| ISPLSI2032-110LJI | In-System Programmable High Density PLD |
| ISPLSI2032-110LT44 | In-System Programmable High Density PLD |
| ISPLSI2032-110LT44I | In-System Programmable High Density PLD |
| ISPLSI2032-110LT48 | In-System Programmable High Density PLD |
| ISPLSI2032-110LT48I | In-System Programmable High Density PLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISPLSI2032-150LJI | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:In-System Programmable High Density PLD |
| ISPLSI2032-150LT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable Complex PLD |
| ISPLSI2032150LT44 | 制造商:LATTICE 功能描述:* |
| ISPLSI2032-150LT44 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| ISPLSI2032-150LT44I | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:In-System Programmable High Density PLD |
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