參數(shù)資料
型號: ISPLSI1032EA-200LT100
廠商: LATTICE SEMICONDUCTOR CORP
元件分類: PLD
英文描述: In-System Programmable High Density PLD
中文描述: EE PLD, 4.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 13/16頁
文件大小: 198K
代理商: ISPLSI1032EA-200LT100
13
Specifications
ispLSI 1032EA
Maximum GRP Delay vs GLB Loads
GLB Load
ispLSI 1032EA-200
ispLSI 1032EA-170
ispLSI 1032EA-125
ispLSI 1032EA-100
3
4
1
8
16
32
G
4
2
GRP/GLB/1032EA
1
Power Consumption
Power consumption in the ispLSI 1032EA device de-
pends on two primary factors: the speed at which the
device is operating, and the number of product terms
used. Figure 4 shows the relationship between power
and operating speed.
0127/1032EA
Icc can be estimated for the ispLSI 1032EA using the following equation:
Icc = 20mA + (# of PTs * .52) + (# of nets * Max Freq * .003)
Where:
# of PTs = Number of Product Terms used in design
# of nets = Number of Signals used in device
Max freq = Highest Clock Frequency to the device (in MHz)
The Icc estimate is based on typical conditions (Vcc = 5.0V, room temperature) and an assumption of four GLB
loads on average exists. These values are for estimates only. Since the value of Icc is sensitive to operating
conditions and the program in the device, the actual Icc should be verified.
f
max (MHz)
Notes: Configuration of eight 16-bit counters
Typical current at 5V, 25
°
C
160
140
120
100
200
0
50
100
150
200
250
I
C
220
ispLSI 1032EA
180
240
260
Figure 4. Typical Device Power Consumption vs fmax
相關(guān)PDF資料
PDF描述
ispLSI1032EA-125LT100 In-System Programmable High Density PLD
ISPLSI1032EA In-System Programmable High Density PLD
ISPLSI1032EA-170LT100 In-System Programmable High Density PLD
ISPLSI1032EA-100 In-System Programmable High Density PLD
ISPLSI1032EA-100LT100 In-System Programmable High Density PLD
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