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參數(shù)資料
| 型號(hào)： | ISPLSI1032E-80LJ |
| 廠商： | LATTICE SEMICONDUCTOR CORP |
| 元件分類： | PLD |
| 英文描述： | In-System Programmable High Density PLD |
| 中文描述： | EE PLD, 15 ns, PQCC84 |
| 封裝： | PLASTIC, LCC-84 |
| 文件頁(yè)數(shù)： | 4/16頁(yè) |
| 文件大小： | 164K |
| 代理商： | ISPLSI1032E-80LJ |
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4
Specifications
ispLSI 1032E
USEispLS 1032EAFORNEWDESGNS
CC
Output Load Conditions (see Figure 2)
Switching Test Conditions
TEST CONDITION
R1
470
R2
390
390
390
CL
35pF
35pF
35pF
B
∞
470
Active High
Active Low
Active High to Z
at
V
-0.5V
OH
C
470
390
5pF
∞
390
5pF
Active Low to Z
at
V
+0.5V
OL
Table 2-0004/1032E
Figure 2. Test Load
+ 5V
R1
R2
CL
*
Device
Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
0213a
DC Electrical Characteristics
Over Recommended Operating Conditions
V
OL
V
OH
I
IL
SYMBOL
1. One output at a time for a maximum duration of one second. V = 0.5V was selected to avoid test problems
by tester ground degradation. Characterized but not 100% tested.
2. Measured using eight 16-bit counters.
3. Typical values are at V = 5V and T = 25
°
C.
4. Maximum I varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
Table 2-0007/1032E
I
IH
I
IL-isp
I
IL-PU
I
OS
PARAMETER
2, 4
I
CC
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
ispEN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I = -4 mA
0V
≤
V
≤
V (Max.)
IN
3.5V
≤
V
≤
V
0V
≤
V
≤
V
0V
≤
V
≤
V
V = 5V, V = 0.5V
CC
V = 0.5V, V = 3.0V
f = 1 MHz
CLOCK
OL
OH
IL
IN
CC
IN
IL
IN
IL
OUT
IL
IH
CONDITION
MIN.
–
2.4
–
TYP.
–
–
–
MAX.
0.4
–
-10
UNITS
V
V
μ
–
–
–
–
–
–
–
–
–
–
190
190
-150
-150
-200
–
–
μ
μ
μ
mA
mA
mA
CC
OUT
CC
Commercial
Industrial
Input Pulse Levels
Table 2-0003/1032E
Input Rise and Fall Time
10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
-125
Others
1.5V
1.5V
See Figure 2
3-state levels are measured 0.5V from
steady-state active level.
≤
2 ns
≤
3 ns
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| ISPLSI1032E-80LT | In-System Programmable High Density PLD |
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| ISPLSI1032E-90LJ | In-System Programmable High Density PLD |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISPLSI1032E80LJI | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:In-System Programmable High Density PLD |
| ISPLSI1032E80LJN | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:In-System Programmable High Density PLD |
| ISPLSI1032E80LJNI | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:In-System Programmable High Density PLD |
| ISPLSI1032E80LT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable Complex PLD |
| ISPLSI1032E-80LT | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:In-System Programmable High Density PLD |
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