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參數資料
| 型號： | ISL84515 |
| 廠商： | Intersil Corporation |
| 元件分類： | DRAM |
| 英文描述： | 512 x 36 synchronous FIFO memory 120-HLQFP 0 to 70 |
| 中文描述： | 低電壓，單電源，聚苯乙烯，模擬開關 |
| 文件頁數： | 3/11頁 |
| 文件大?。?/td> | 266K |
| 代理商： | ISL84515 |
3
Absolute Maximum Ratings
Thermal Information
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to15V
Input Voltages
IN (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V)
NO, NC (Note 2) . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V)
Output Voltages
COM (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V)
Continuous Current (Any Terminal). . . . . . . . . . . . . . . . . . . . . 20mA
Peak Current NO, NC, or COM
(Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . . . . . 30mA
ESD Rating (Per MIL-STD-883 Method 3015). . . . . . . . . . . . . >2kV
Operating Conditions
Temperature Range
ISL8451XIX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
Thermal Resistance (Typical, Note 3)
5 Ld SOT-23 Package . . . . . . . . . . . . . . . . . . . . . . .
8 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . 150
o
C
Moisture Sensitivity (See Technical Brief TB363)
All Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 1
Maximum Storage Temperature Range. . . . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300
o
C
(Lead Tips Only)
θ
JA
(
o
C/W)
225
170
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
2. Signals on NO, NC, COM, or IN exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings.
3.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
Test Conditions: V+ = +4.5V to +5.5V, GND = 0V, V
INH
= 2.4V, V
INL
= 0.8V (Note 4),
Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
TEMP
(
o
C)
(NOTE 5)
MIN
TYP
(NOTE 5)
MAX
UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ANALOG
ON Resistance, R
ON
Full
0
-
V+
V
V+ = 4.5V, I
COM
= 1.0mA, V
COM
= 3.5V,
(See Figure 4)
25
-
-
20
Full
-
-
25
R
ON
Flatness, R
FLAT(ON)
V+ = 4.5V, I
COM
= 1.0mA, V
COM
= 1V, 2V, 3V
25
-
-
3
Full
-
-
5
NO or NC OFF Leakage Current,
I
NO(OFF)
or I
NC(OFF)
V+ = 5.5V, V
COM
= 1V, 4.5V, V
NO
or V
NC
= 4.5V, 1V,
(Note 6)
25
-1
0.01
1
nA
Full
-20
-
20
nA
COM OFF Leakage Current,
I
COM(OFF)
V+ = 5.5V, V
COM
= 4.5V, 1V, V
NO
or V
NC
= 1V, 4.5V,
(Note 6)
25
-1
0.01
1
nA
Full
-20
-
20
nA
COM ON Leakage Current,
I
COM(ON)
V
+
= 5.5V, V
COM
= 1V, 4.5V, or V
NO
or V
NC
= 1V,
4.5V, (Note 6)
25
-2
0.01
2
nA
Full
-40
-
40
nA
DIGITAL INPUT CHARACTERISTICS
Input Voltage High, V
INH
Input Voltage Low, V
INL
Input Current, I
INH
, I
INL
DYNAMIC CHARACTERISTICS
Full
2.4
-
V+
V
Full
0
-
0.8
V
μ
A
V+ = 5.5V, V
IN
= 0V or V+
Full
-1
-
1
Turn-ON Time, t
ON
V
NO
or V
NC
= 3V, R
L
= 300
, C
L
= 35pF,
V
IN
= 0 to 3V, (See Figure 1)
25
-
-
150
ns
Full
-
-
240
ns
Turn-OFF Time, t
OFF
V
NO
or V
NC
= 3V, R
L
= 300
, C
L
= 35pF,
V
IN
= 0 to 3V, (See Figure 1)
25
-
-
100
ns
Full
-
-
150
ns
Charge Injection, Q
C
L
= 1.0nF, V
G
= 0V, R
G
= 0
, (See Figure 2)
R
L
= 50
, C
L
= 15pF, f = 100kHz, (See Figure 3)
f = 1MHz, V
NO
or V
NC
= V
COM
= 0V, (See Figure 5)
f = 1MHz, V
NO
or V
NC
= V
COM
= 0V, (See Figure 5)
25
-
2
10
pC
OFF Isolation
25
-
>90
-
dB
NO or NC OFF Capacitance, C
OFF
COM OFF Capacitance,
C
COM(OFF)
COM ON Capacitance, C
COM(ON)
25
-
14
-
pF
25
-
14
-
pF
f = 1MHz, V
NO
or V
NC
= V
COM
= 0V, (See Figure 5)
25
-
30
-
pF
ISL84514, ISL84515
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