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參數(shù)資料
| 型號： | ISL6610IBZ |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual Synchronous Rectified MOSFET Drivers |
| 中文描述： | 4 A BUF OR INV BASED MOSFET DRIVER, PDSO14 |
| 封裝： | ROHS COMPLIANT, PLASTIC, MS-012AB, SOIC-14 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 279K |
| 代理商： | ISL6610IBZ |
4
FN6395.0
November 22, 2006
Absolute Maximum Ratings
Thermal Information
Supply Voltage (PVCC, VCC) . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V
EN
, V
PWM
) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (V
BOOT-GND
). . . -0.3V to 25V (DC) or 36V (<200ns)
BOOT To PHASE Voltage (V
BOOT-PHASE
). . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V (DC)
GND -8V (<20ns Pulse Width, 10
μ
J) to 30V (<100ns)
UGATE Voltage . . . . . . . . . . . . . . . . V
PHASE
- 0.3V (DC) to V
BOOT
V
PHASE
- 5V (<20ns Pulse Width, 10
μ
J) to V
BOOT
LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5
μ
J) to VCC + 0.3V
Ambient Temperature Range. . . . . . . . . . . . . . . . . .-40°C to +125°C
HBM ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
Thermal Resistance (Typical)
SOIC Package (Note 1) . . . . . . . . . . . .
QFN Package (Notes 2 and 3). . . . . . .
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . .+150°C
Maximum Storage Temperature Range. . . . . . . . . .-65°C to +150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . .+300°C
(SOIC - Lead Tips Only)
θ
JA
(°C/W)
90
46
θ
JC
(°C/W)
N/A
8.5
Recommended Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . .-40°C to +85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . +125°C
Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
±
10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
+150°C max junction temperature is intended for short periods of time to prevent shortening the lifetime. Constantly operated at 150°C may shorten the life of the part.
NOTES:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
3.
θ
JC
, “case temperature” location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.
Electrical Specifications
These specifications apply for T
A
= -40°C to +85°C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SUPPLY CURRENT
Bias Supply Current
I
VCC+PVCC
PWM pin floating, V
VCC
= V
PVCC
= 5V
-
240
-
μ
A
F
PWM
= 300kHz, V
VCC
= V
PVCC
= 5V
-
1.6
-
mA
BOOTSTRAP DIODE
Forward Voltage
V
F
Forward bias current = 2mA
T
A
= 0°C to +70°C
0.30
0.60
0.70
V
Forward bias current = 2mA
T
A
= -40°C to +85°C
0.30
0.60
0.75
V
POWER-ON RESET
POR Rising
-
3.4
4.2
V
POR Falling
2.6
3.0
-
V
Hysteresis
-
400
-
mV
PWM INPUT
Sinking Impedance
R
PWM_SNK
-
4.6
-
k
Ω
Source Impedance
R
PWM_SRC
-
4.9
-
k
Ω
Tri-State Rising Threshold
V
VCC
= V
PVCC
= 5V (250mV Hysteresis)
1.00
1.20
1.40
V
Tri-State Falling Threshold
V
VCC
= V
PVCC
= 5V(300mV Hysteresis)
3.10
3.41
3.70
V
Tri-State Shutdown Holdoff Time
t
TSSHD
-
80
-
ns
SWITCHING TIME (Note 4, See Figure 1)
UGATE Rise Time
t
RU
3nF Load
-
8.0
-
ns
LGATE Rise Time
t
RL
3nF Load
-
8.0
-
ns
UGATE Fall Time
t
FU
3nF Load
-
8.0
-
ns
LGATE Fall Time
t
FL
3nF Load
-
4.0
-
ns
UGATE Turn-Off Propagation Delay
t
PDLU
Outputs Unloaded
-
18
-
ns
LGATE Turn-Off Propagation Delay
t
PDLL
Outputs Unloaded
-
25
-
ns
ISL6610, ISL6610A
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