參數(shù)資料
型號： ISL6609ACRZ
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 7-Bit Bus Interfaces With 3-State Outputs 20-SOIC 0 to 70
中文描述： 4 A AND GATE BASED MOSFET DRIVER, PQCC8
封裝： 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MO-220VEEC, QFN-8
文件頁數(shù)： 4/11頁
文件大?。?/td> 321K
代理商： ISL6609ACRZ
4
FN9221.0
August 10, 2005
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V
EN
, V
PWM
) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (V
BOOT-GND
). . . -0.3V to 25V (DC) or 36V (<200ns)
BOOT To PHASE Voltage (V
BOOT-PHASE
). . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V (DC)
GND -8V (<20ns Pulse Width, 10
μ
J) to 30V (<100ns)
UGATE Voltage . . . . . . . . . . . . . . . . V
PHASE
- 0.3V (DC) to V
BOOT
V
PHASE
- 5V (<20ns Pulse Width, 10
μ
J) to V
BOOT
LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5
μ
J) to VCC + 0.3V
Ambient Temperature Range. . . . . . . . . . . . . . . . . . .-40°C to 125°C
HBM ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
Recommended Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . .-40°C to 100°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . . 125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
±
10%
Thermal Resistance (Notes 1, 2, & 3)
SOIC Package (Note 1) . . . . . . . . . . . .
QFN Package (Notes 2 & 3) . . . . . . . .
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . .150°C
Maximum Storage Temperature Range. . . . . . . . . . .-65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300°C
(SOIC - Lead Tips Only)
θ
JA
(°C/W)
110
95
θ
JC
(°C/W)
N/A
36
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
3.
θ
JC
, “case temperature” location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.
Electrical Specifications
These specifications apply for T
A
= -40°C to 100°C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
I
VCC
PWM pin floating, V
VCC
= 5V
-
132
-
μ
A
POR Rising
-
3.4
4.2
POR Falling
2.2
3.0
-
Hysteresis
-
400
-
mV
PWM INPUT
Sinking Impedance
R
PWM_SNK
2.75
4
5.5
k
Source Impedance
R
PWM_SRC
3
4.25
5.75
k
Three-State Rising Threshold
V
VCC
= 5V (100mV Hysteresis)
-
1.70
2.00
V
Three-State Falling Threshold
V
VCC
= 5V (100mV Hysteresis)
3.10
3.41
-
V
Three-State Shutdown Holdoff Time
t
TSSHD
t
PDLU
or t
PDLL
+ Gate Falling Time
-
20
-
ns
EN INPUT
EN LOW Threshold
1.0
1.3
-
V
EN HIGH Threshold
-
1.6
2.0
V
SWITCHING TIME
(See Figure 1 on Page 6)
UGATE Rise Time (Note 4)
t
RU
V
VCC
= 5V, 3nF Load
-
8.0
-
ns
LGATE Rise Time (Note 4)
t
RL
V
VCC
= 5V, 3nF Load
-
8.0
-
ns
UGATE Fall Time (Note 4)
t
FU
V
VCC
= 5V, 3nF Load
-
8.0
-
ns
LGATE Fall Time (Note 4)
t
FL
V
VCC
= 5V, 3nF Load
-
4.0
-
ns
UGATE Turn-Off Propagation Delay
t
PDLU
V
VCC
= 5V, Outputs Unloaded
-
18
-
ns
LGATE Turn-Off Propagation Delay
t
PDLL
V
VCC
= 5V, Outputs Unloaded
-
25
-
ns
ISL6609, ISL6609A
相關(guān)PDF資料
PDF描述
ISL6609ACRZ-T 7-Bit Bus Interfaces With 3-State Outputs 20-SOIC 0 to 70
ISL6609CBZ Synchronous Rectified MOSFET Driver
ISL6609CBZ-T 7-Bit Bus Interfaces With 3-State Outputs 20-SOIC 0 to 70
ISL6610 Dual Synchronous Rectified MOSFET Drivers
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