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參數(shù)資料
| 型號： | ISL6608IBZ-T |
| 廠商： | INTERSIL CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Synchronous Rectified MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | LEAD FREE, PLASTIC, MS-012AA, SOIC-8 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 332K |
| 代理商： | ISL6608IBZ-T |
9
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
will push the IC beyond the maximum recommended
operating junction tem
perature of 125
°
C. The maximum
allowable IC power dissipation for the SO-8 package is
approximately 800mW. When designing the driver into an
application, it is recommende
d that the following calculation
be performed to ensure safe operation at the desired
frequency for the selected MOSFETs. The power dissipated
by the driver is approximated as below and plotted as in
Figure 9.
where f
sw
is the switching frequency of the PWM signal. V
U
and V
L
represent the upper and lower gate rail voltage. Q
U
and Q
L
are the upper and lower gate charge determined by
MOSFET s
election and any external capacitance added to
the gate pins. The I
DDQ
V
CC
product is the quiescent power
of the driver and is typically negligible.
Layout Consideration
For heat spreading, place copper underneath the IC whether
it has an exposed pad or not. The copper area can be
extended beyond the bottom area of the IC and/or
connected to buried copper plane(s) with thermal vias. This
combination of vias for vertical heat escape, extended
copper plane, and buried planes for heat spreading allows
the IC to achieve its full thermal potential.
Place each channel power component as close to each
other as possible to reduce PCB copper losses and PCB
parasitics: shortest distance between DRAINs of upper FETs
and SOURCEs of lower FETs; shortest distance between
DRAINs of lower FETs and the power ground. Thus, smaller
amplitudes of positive and negative ringing are on the
switching edges of the PHASE node. However, some space
in between power components is required for good airflow.
The gate traces from the drivers to the FETs should be kept
short and wide to reduce the inductance of the traces and
promote clean drive signals.
P
f
sw
1.5V
U
Q
U
V
L
Q
L
+
(
)
I
DDQ
V
CC
+
=
FIGURE 9. POWER DISSIPATION vs FREQUENCY
FREQUENCY (kHz)
0
100
200
300
400
500
600
700
800
900
1000
0
200
400
600
800
1000 1200 1400 1600 1800 2000
P
Q
U
=50nC
Q
L
=50nC
Q
U
=50nC
Q
L
=100nC
Q
U
=100nC
Q
L
=200nC
Q
U
=20nC
Q
L
=50nC
ISL6608
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PDF描述 |
|---|---|
| ISL6608 | Triple 3-Input Positive-AND Gates 14-TSSOP -40 to 85 |
| ISL6608CB | Synchronous Rectified MOSFET Driver |
| ISL6608CBZ | Synchronous Rectified MOSFET Driver |
| ISL6608CR | Synchronous Rectified MOSFET Driver |
| ISL6608CRZ | Synchronous Rectified MOSFET Driver |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6608IR | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| ISL6608IR-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| ISL6608IRZ | 功能描述:功率驅(qū)動器IC VER OF ISL6608IR -40 TO +100 RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6608IRZ-T | 功能描述:功率驅(qū)動器IC VER OF ISL6608IR-T -40 TO +100 RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6609ACBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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