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參數(shù)資料
| 型號(hào)： | ISL6608CR |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Synchronous Rectified MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PQCC8 |
| 封裝： | 3 X 3 MM, PLASTIC, MO-220VEEC, QFN-8 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 332K |
| 代理商： | ISL6608CR |
4
ti
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
BOOT Voltage (V
BOOT
). . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 22V
Phase Voltage (V
PHASE
)
(Note 1). . . V
BOOT
- 7V to V
BOOT
+ 0.3V
Input Voltage (V
DE
, V
PWM
). . . . . . . . . . . . . . . -0.3V to VCC + 0.
3V
UGATE. . . . . . . . . . . . . . . . . . . . . .V
PHASE
- 0.3V to V
BOOT
+ 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
Ambient Temperature Range. . . . . . . . . . . . . . . . . . .-40°C to 125°C
Recommended Operating Conditions
Ambient Temperature Range
. . . . . . . . . . . . . . . . . . . .-40
°
C to 85
°
C
Maximum Operating Junction Temperature. . . . . . . . . . . . . . 125
°
C
Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
±
10
%
Thermal Resistance (Typical, Notes 2, 3, 4)
θ
JA
(°C/W)
SOIC Package (Note 2) . . . . . . . . . . . .
QFN Package (Notes 3, 4). . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . .150°C
Maximum Storage Temperature Range. . . . . . . . . . .-65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300°C
(SOIC - Lead Tips Only)
θ
JC
(°C/W)
n/a
16
110
82
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The Phase Voltage is capable of withstanding -7V when the BOOT pin is at GND.
2.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
3.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
4. For
θ
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
5. Guaranteed by design, not tested.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
I
VCC
PWM Pin Floating, V
VCC
= 5V
-
80
-
μ
A
POWER-ON RESET (POR)
VCC Rising
-
3.40
4.00
V
VCC Falling
T
A
= 0°C to 70°C
2.40
2.90
-
V
T
A
= -40°C to 85°C
2.175
2.90
-
V
Hysteresis
-
500
-
mV
BOOTSTRAP DIODE
Forward Voltage
V
F
V
VCC
= 5V, I
F
= 2mA
0.40
0.52
0.62
V
PWM INPUT
Input Current
I
PWM
V
PWM
= 5V
-
250
-
μ
A
V
PWM
= 0V
-
-250
-
μ
A
PWM Three-State Rising Threshold
V
VCC
= 5V
0.80
1.00
1.20
V
PWM Three-State Falling Threshold
V
VCC
= 5V, T
A
= 0°C to 70°C
3.40
3.65
3.90
V
V
VCC
= 5V, T
A
= -40°C to 85°C
3.05
3.65
4.10
V
V
VCC
= 5.5V
-
-
4.55
V
Three-State Shutdown Holdoff Time
t
TSSHD
V
VCC
= 5V, T
A
= 0°C to 70°C
100
160
250
ns
V
VCC
= 5V, T
A
= -40°C to 85°C
80
160
250
ns
FORCED CONTINUOUS CONDUCTION MODE (FCCM) INPUT
FCCM LOW Threshold
0.50
-
-
V
FCCM HIGH Threshold
T
A
= 0°C to 70°C
-
-
2.00
V
T
A
= -40°C to 85°C
-
-
2.05
V
ISL6608
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|---|---|
| ISL6608CRZ | Synchronous Rectified MOSFET Driver |
| ISL6608CRZ-T | Synchronous Rectified MOSFET Driver |
| ISL6608IB | Synchronous Rectified MOSFET Driver |
| ISL6608IR | Synchronous Rectified MOSFET Driver |
| ISL6608CR-T | Synchronous Rectified MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6608CR-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| ISL6608CRZ | 功能描述:功率驅(qū)動(dòng)器IC VER OF ISL6608CR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6608CRZ-T | 功能描述:功率驅(qū)動(dòng)器IC VER OF ISL6608CR-T RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6608IB | 功能描述:功率驅(qū)動(dòng)器IC MOSFET DUAL SYNC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6608IB-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
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