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參數(shù)資料
| 型號： | ISL6608CR-T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Synchronous Rectified MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PQCC8 |
| 封裝： | 3 X 3 MM, PLASTIC, MO-220VEEC, QFN-8 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 332K |
| 代理商： | ISL6608CR-T |
5
Functional Pin Description
UGATE (Pin 1 for SOIC-8, Pin 8 for QFN)
The UGATE pin is the upper gate drive output. Connect to
the gate of high-side power N-Channel MOSFET.
BOOT (Pin 2 for SOIC-8, Pin 1 for QFN)
BOOT is the floating bootstrap supply pin for the upper gate
drive. Connect the bootstrap capacitor between this pin and
the PHASE pin. The bootstrap capacitor provides the charge
to turn on the upper MOSFET. See the Bootstrap Diode and
Capacitor section under DESCRIPTION for guidance in
choosing the appropriate capacitor value.
PWM (Pin 3 for SOIC-8, Pin 2 for QFN)
The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation, see the
three-state PWM Input section under DESCRIPTION for further
details. Connect this pin to the PWM output of the controller.
GND (Pin 4 for SOIC-8, Pin 3 for QFN)
GND is the ground pin for the IC.
LGATE (Pin 5 for SOIC-8, Pin 4 for QFN)
LGATE is the lower gate drive output. Connect to gate of the
low-side power N-Channel MOSFET.
VCC (Pin 6 for SOIC-8, Pin 5 for QFN)
Connect the VCC pin to a +5V bias supply. Place a high
quality bypass capacitor from this pin to GND.
FCCM (Pin 7 for SOIC-8, Pin 6 for QFN)
The FCCM pin enables or disables Diode Emulation. When
FCCM is LOW, diode emulation is allowed. Otherwise,
continuous conduction mode is forced (FCCM= Forced
Continuous Conduction Mode). See the Diode Emulation
section under DESCRIPTION for more detail.
PHASE (Pin 8 for SOIC-8, Pin 7 for QFN)
Connect the PHASE pin to the source of the upper MOSFET
and the drain of the lower MOSFET. This pin provides a
return path for the upper gate driver.
Thermal Pad (in QFN only)
The PCB “thermal land” design for this exposed die pad
should include thermal vias that drop down and connect to
one or more buried copper plane(s). This combination of
vias for vertical heat escape and buried planes for heat
spreading allows the QFN to achieve its full thermal
potential. This pad should be grounded. Refer to TB389 for
design guidelines.
SWITCHING TIME
UGATE Rise Time
t
RU
V
VCC
= 5V, 3nF Load
-
8.0
-
ns
LGATE Rise Time
t
RL
V
VCC
= 5V, 3nF Load
-
8.0
-
ns
UGATE Fall Time
t
FU
V
VCC
= 5V, 3nF Load
-
8.0
-
ns
LGATE Fall Time
t
FL
V
VCC
= 5V, 3nF Load
-
4.0
-
ns
UGATE Turn-Off Propagation Delay
t
PDLU
V
VCC
= 5V, Outputs Unloaded
-
35
-
ns
LGATE Turn-Off Propagation Delay
t
PDLL
V
VCC
= 5V, Outputs Unloaded
-
35
-
ns
UGATE Turn-On Propagation Delay
t
PDHU
V
VCC
= 5V, Outputs Unloaded
-
20
-
ns
LGATE Turn-On Propagation Delay
t
PDHL
V
VCC
= 5V, Outputs Unloaded
-
20
-
ns
UG/LG Three-state Propagation Delay
t
PTS
V
VCC
= 5V, Outputs Unloaded
-
35
-
ns
Minimum LG On TIME in DCM (Note 5)
t
LGMIN
-
400
-
ns
OUTPUT
Upper Drive Source Resistance
R
U
250mA Source Current
-
1
2.5
Upper Driver Source Current (Note 5)
I
U
V
UGATE-PHASE
= 2.5V
-
2.00
-
A
Upper Drive Sink Resistance
R
U
250mA Sink Current
-
1
2.5
Upper Driver Sink Current (Note 5)
I
U
V
UGATE-PHASE
= 2.5V
-
2.00
-
A
Lower Drive Source Resistance
R
L
250mA Source Current
-
1
2.5
Lower Driver Source Current (Note 5)
I
L
V
LGATE
= 2.5V
-
2.00
-
A
Lower Drive Sink Resistance
R
L
250mA Sink Current
-
0.5
1.0
Lower Driver Sink Current (Note 5)
I
L
V
LGATE
= 2.5V
-
4.00
-
A
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISL6608
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|---|---|
| ISL6608IB-T | Synchronous Rectified MOSFET Driver |
| ISL6608IR-T | Synchronous Rectified MOSFET Driver |
| ISL6608IRZ | Synchronous Rectified MOSFET Driver |
| ISL6608IRZ-T | Synchronous Rectified MOSFET Driver |
| ISL6608CBZ-T | Synchronous Rectified MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6608CRZ | 功能描述:功率驅(qū)動器IC VER OF ISL6608CR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6608CRZ-T | 功能描述:功率驅(qū)動器IC VER OF ISL6608CR-T RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6608IB | 功能描述:功率驅(qū)動器IC MOSFET DUAL SYNC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6608IB-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| ISL6608IBZ | 功能描述:功率驅(qū)動器IC VER OF ISL6608IB W/-40TO+100 TEMP RNG RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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