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參數(shù)資料
| 型號： | ISL6608 |
| 廠商： | Intersil Corporation |
| 英文描述： | Triple 3-Input Positive-AND Gates 14-TSSOP -40 to 85 |
| 中文描述： | 同步整流MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 332K |
| 代理商： | ISL6608 |
6
Description
Theory of Operation
Designed for speed, the ISL6608 dual MOSFET driver controls
both high-side and low-side N-Channel FETs from one
externally provided PWM signal.
A rising edge on PWM initiates the turn-off of the lower
MOSFET (see Figure 1, Timing Diagram). After a short
propagation delay [t
PDLL
], the lower gate begins to fall.
Typical fall times [t
FL
] are provided in the Electrical
Specifications section. Adaptive shoot-through circuitry
monitors the LGATE voltage. When LGATE has fallen below
1V, UGATE is allowed to turn ON. This prevents both the
lower and upper MOSFETs from conducting simultaneously,
or shoot-through.
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [t
PDLU
] is encountered before the upper
gate begins to fall [t
FU
]. The upper MOSFET gate-to-source
voltage is monitored, and the lower gate is allowed to rise
after the upper MOSFET gate-to-source voltage drops below
1V. The lower gate then rises [t
RL
], turning on the lower
MOSFET.
This driver is optimized for converters with large step down
compared to the upper MOSFET because the lower
MOSFET conducts for a much longer time in a switching
period. The lower gate driver is therefore sized much larger
to meet this application requirement.
The 0.5
on-resistance and 4A sink current capability
enable the lower gate driver to absorb the current injected to
the lower gate through the drain-to-gate capacitor of the
lower MOSFET and prevent a shoot through caused by the
high dv/dt of the phase node.
PWM
UGATE
LGATE
t
PDLL
t
FL
t
PDHU
t
RU
t
PDLU
t
FU
t
PDHL
t
RL
1V
2.5V
t
RU
t
FU
t
FL
1V
t
PTS
t
TSSHD
t
TSSHD
t
PTS
FIGURE 1. TIMING DIAGRAM
ISL6608
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISL6608CB | Synchronous Rectified MOSFET Driver |
| ISL6608CBZ | Synchronous Rectified MOSFET Driver |
| ISL6608CR | Synchronous Rectified MOSFET Driver |
| ISL6608CRZ | Synchronous Rectified MOSFET Driver |
| ISL6608CRZ-T | Synchronous Rectified MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6608CB | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| ISL6608CB-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| ISL6608CBZ | 功能描述:功率驅(qū)動器IC VER OF ISL6608CB RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6608CBZ-T | 功能描述:功率驅(qū)動器IC VER OF ISL6608CB-T RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6608CR | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
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