參數(shù)資料
型號： ISL6597CRZ
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： Dual Synchronous Rectified MOSFET Drivers
中文描述： 4 A BUF OR INV BASED MOSFET DRIVER, PQCC16
封裝： 4 X 4 MM, ROHS COMPLIANT, PLASTIC, MO-220VGGC, QFN-16
文件頁數(shù)： 4/10頁
文件大小： 252K
代理商： ISL6597CRZ
4
FN9165.0
November 22, 2006
Absolute Maximum Ratings
Thermal Information
Supply Voltage (PVCC, VCC) . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V
EN
, V
PWM
) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (V
BOOT-GND
). . . -0.3V to 25V (DC) or 36V (<200ns)
BOOT To PHASE Voltage (V
BOOT-PHASE
). . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V (DC)
GND -8V (<20ns Pulse Width, 10
μ
J) to 30V (<100ns)
UGATE Voltage . . . . . . . . . . . . . . . . V
PHASE
- 0.3V (DC) to V
BOOT
V
PHASE
- 5V (<20ns Pulse Width, 10
μ
J) to V
BOOT
LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5
μ
J) to VCC + 0.3V
Ambient Temperature Range. . . . . . . . . . . . . . . . . .-40°C to +125°C
HBM ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
Thermal Resistance (Notes 1 and 2)
QFN Package. . . . . . . . . . . . . . . . . .
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . .+150°C
Maximum Storage Temperature Range. . . . . . . . . .-65°C to +150°C
θ
JA
(°C/W)
46
θ
JC
(°C/W)
8.5
Recommended Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . +125°C
Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
±
10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
+150°C max junction temperature is intended for short periods of time to prevent shortening the lifetime. Constantly operated at 150°C may shorten the life of the part.
NOTES:
1.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
2.
θ
JC
, “case temperature” location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.
Electrical Specifications
These specifications apply for T
A
= 0°C to +70°C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
I
VCC+PVCC
PWM pin floating, V
VCC
= V
PVCC
= 5V
F
PWM
= 300kHz, V
VCC
= V
PVCC
= 5V
-
350
-
μ
A
-
1.7
-
mA
POR Rising
-
3.4
4.2
V
POR Falling
2.6
3.0
-
V
Hysteresis
-
400
-
mV
BOOTSTRAP DIODE
Forward Voltage
V
F
Forward bias current = 2mA
0.3
0.6
0.7
V
VCTRL INPUT
Turn-On Threshold
2.5
2.8
-
V
Hysteresis
-
100
-
mV
ENABLE INPUT
EN LOW Threshold
1.00
1.34
-
V
EN HIGH Threshold
1.40
1.60
-
V
EN Hysteresis
100
260
-
mV
PWM INPUT
Sinking Impedance
R
PWM_SNK
R
PWM_SRC
-
3.5
-
k
Ω
Source Impedance
-
3.5
-
k
Ω
Tri-State Lower Threshold
V
VCC
= 3.3V (120mV Hysteresis)
V
VCC
= 5V (300mV Hysteresis)
V
VCC
= 3.3V (110mV Hysteresis)
V
VCC
= 5V (300mV Hysteresis)
-
1.15
1.4
V
-
1.55
1.75
V
Tri-State Upper Threshold
1.65
1.85
-
V
3.00
3.18
-
V
Tri-State Shutdown Holdoff Time
t
TSSHD
-
80
-
ns
SWITCHING TIME
(Note 3, See Figure 1)
UGATE Rise Time
t
RU
t
RL
t
FU
V
VCC
= 5V, 3nF Load
V
VCC
= 5V, 3nF Load
V
VCC
= 5V, 3nF Load
-
8.0
-
ns
LGATE Rise Time
-
8.0
-
ns
UGATE Fall Time
-
8.0
-
ns
ISL6597
相關PDF資料
PDF描述
ISL6597 Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-TSSOP -40 to 85
ISL6608CB-T Synchronous Rectified MOSFET Driver
ISL6608IBZ Synchronous Rectified MOSFET Driver
ISL6608IBZ-T Synchronous Rectified MOSFET Driver
ISL6608 Triple 3-Input Positive-AND Gates 14-TSSOP -40 to 85
相關代理商/技術參數(shù)
參數(shù)描述
ISL6597CRZ-T 功能描述:IC MOSFET DRVR DUAL SYNC 16-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
ISL6598DRZ-T 制造商:Intersil Corporation 功能描述:PB-FREE 48LD 7X7 QFN, T&R, GRAPHICS PROCESSOR DIGITAL CONT. - Tape and Reel 制造商:Intersil Corporation 功能描述:IC GRAPHICS PROCESSOR DGTL 制造商:Intersil 功能描述:4 8LD 7X7 GRAPHICS PROCESSOR DIGTL CONT
ISL6605CB 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件
ISL6605CB-T 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件
ISL6605CB-TS2495 制造商:Rochester Electronics LLC 功能描述: 制造商:Intersil Corporation 功能描述:4 A HALF BRDG BASED MOSFET DRIVER, 8 Pin Plastic SOP
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*