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參數資料
| 型號： | ISL6594DCRZ |
| 廠商： | INTERSIL CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features |
| 中文描述： | 3 A HALF BRDG BASED MOSFET DRIVER, PDSO10 |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, DFN-10 |
| 文件頁數： | 4/11頁 |
| 文件大?。?/td> | 260K |
| 代理商： | ISL6594DCRZ |
4
FN9282.0
March 30, 2006
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V
BOOT-GND
). . . . . . . . . . . . . . . . . . . . . . . . . . . .36V
Input Voltage (V
PWM
) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
UGATE. . . . . . . . . . . . . . . . . . . V
PHASE
- 0.3V
DC
to V
BOOT
+ 0.3V
V
PHASE
- 3.5V (<100ns Pulse Width, 2μJ) to V
BOOT
+ 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V
DC
to V
PVCC
+ 0.3V
GND - 5V (<100ns Pulse Width, 2μJ) to V
PVCC
+ 0.3V
PHASE. . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V
DC
to 15V
DC
GND - 8V (<400ns, 20μJ) to 30V (<200ns, V
BOOT-GND
<36V))
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . .Class I JEDEC STD
Recommended Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . . 0°C to 85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . . 125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . 6.8V to 13.2V
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . .5V to 12V
±
10%
Thermal Resistance
SOIC Package (Note 1) . . . . . . . . . . . .
DFN Package (Notes 2, 3). . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . .150°C
Maximum Storage Temperature Range. . . . . . . . . . .-65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300°C
(SOIC - Lead Tips Only)
θ
JA
(°C/W)
100
48
θ
JC
(°C/W)
N/A
7
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air.
2.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
3. For
θ
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
I
VCC
ISL6594D, f
PWM
= 300kHz, V
VCC
= 12V
-
4.5
-
mA
I
VCC
ISL6594D, f
PWM
= 1MHz, V
VCC
= 12V
-
5
-
mA
Gate Drive Bias Current
I
PVCC
ISL6594D, f
PWM
= 300kHz, V
PVCC
= 12V
-
7.5
-
mA
I
PVCC
ISL6594D, f
PWM
= 1MHz, V
PVCC
= 12V
-
8.5
-
mA
POWER-ON RESET AND ENABLE
VCC Rising Threshold
6.1
6.4
6.7
V
VCC Falling Threshold
4.7
5.0
5.3
V
PWM INPUT (See Timing Diagram on Page 6)
Input Current
I
PWM
V
PWM
= 3.3V
-
400
-
μA
V
PWM
= 0V
-
-350
-
μA
PWM Rising Threshold (Note 4)
VCC = 12V
-
1.70
-
V
PWM Falling Threshold (Note 4)
VCC = 12V
-
1.30
-
V
Typical Three-State Shutdown Window
VCC = 12V
1.23
-
1.82
V
Three-State Lower Gate Falling Threshold
VCC = 12V
-
1.18
-
V
Three-State Lower Gate Rising Threshold
VCC = 12V
-
0.76
-
V
Three-State Upper Gate Rising Threshold
VCC = 12V
-
2.36
-
V
Three-State Upper Gate Falling Threshold
VCC = 12V
-
1.96
-
V
Shutdown Holdoff Time
t
TSSHD
-
245
-
ns
UGATE Rise Time (Note 4)
t
RU
V
PVCC
= 12V, 3nF Load, 10% to 90%
-
26
-
ns
LGATE Rise Time (Note 4)
t
RL
V
PVCC
= 12V, 3nF Load, 10% to 90%
-
18
-
ns
ISL6594D
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