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3
Absolute Maximum Ratings
Thermal Information
DCIN, CSIP, DCPRN, ACPRN, CSON to GND . . . . . .-0.3V to +28V
CSIP-CSIN, CSOP-CSON. . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
CSIP-SGATE, CSIP-BGATE . . . . . . . . . . . . . . . . . . . . .-0.3V to 16V
PHASE to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -7V to 28V
BOOT to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to +35V
BOOT-PHASE, VDD-GND, VDDP-PGND. . . . . . . . . . . .-0.3V to 7V
ICM, ICOMP, VCOMP . . . . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V
ACSET and DCSET to GND (Note 3) . . . . . . . . -0.8V to VDD+0.3V
VDDP, ACLIM, CHLIM, VREF, CELLS. . . . . . . . -0.3V to VDD+0.3V
EN, VADJ, PGND to GND . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V
UGATE. . . . . . . . . . . . . . . . . . . . . . . . . PHASE-0.3V to BOOT+0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . PGND-0.3V to VDDP+0.3V
Thermal Resistance
QFN Package (Notes 4, 6). . . . . . . . . .
QSOP Package (Note 5) . . . . . . . . . . .
ESD Classification. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 1
Junction Temperature Range. . . . . . . . . . . . . . . . . .-10°C to +150°C
Operating Temperature Range . . . . . . . . . . . . . . . .-10°C to +100°C
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Lead Temperature (soldering, 10s).. . . . . . . . . . . . . . . . . . . .+300°C
θ
JA
(°C/W)
39
80
θ
JC
(°C/W)
9.5
NA
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress ratings only and operation of the
device at these or any other conditions above those indicated in the operational sections of the specifications is not implied.
NOTES:
3. When the voltage across ACSET and DCSET is below 0V, the current through ACSET and DCSET should be limited less than 1mA.
4.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
5.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6. For
θ
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
DCIN = CSIP = CSIN = 18V, CSOP = CSON = 12V, ACSET = DCSET = 1.5V, VREF = ACLIM = CHLIM,
VADJ = Floating, EN = VDD = 5V, BOOT-PHASE = 5.0V, GND = PGND = 0V, C
VDD
= 1μF I
VDD
= 0mA,
T
A
= -10°C to +100°C, T
J
≤
125°C, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SUPPLY AND BIAS REGULATOR
DCIN Input Voltage Range
7
25
V
DCIN Quiescent Current
EN = VDD, 7V
<
DCIN
<
25V
1.6
4
mA
DCIN Quiescent Current in Shutdown mode
EN = 0, 7V
<
DCIN
<
25V
1.3
3
mA
Battery Leakage Current (Note 5)
DCIN = 0, no load
2
10
μ
A
VDD Output Voltage/Regulation
7V
<
DCIN
<
25 V, 0
<
I
VDD
<
30mA
Rising
4.925
5.075
5.225
V
VDD Undervoltage Lockout Trip Point
4.2
4.4
4.6
V
Hysteresis
100
250
400
mV
Reference Output Voltage VREF
O
<
I
VREF
<
300
μ
A
2.365
2.390
2.415
V
Battery Charge Voltage Accuracy
CSON = 16.8V, CELLS = VDD, VADJ = Float
-0.5
0
0.5
%
CSON = 12.6V, CELLS = GND, VADJ = Float
-0.55
0
0.55
CSON = 8.4V, CELLS = FLOAT, VADJ = Float
-0.55
0
0.55
CSON = 17.64V, CELLS = VDD, VADJ = VREF
-0.6
0
0.6
CSON = 13.23V, CELLS = GND, VADJ = VREF
-0.6
0
0.6
CSON = 8.82V, CELLS = FLOAT, VADJ = VREF
-0.6
0
0.6
CSON = 15.96V, CELLS = VDD, VADJ = GND
-0.6
0
0.6
CSON = 11.97V, CELLS = GND, VADJ = GND
-0.6
0
0.6
CSON = 7.98V, CELLS = FLOAT, VADJ = GND
-0.6
0
0.6
TRIP POINTS
ACSET Threshold
1.235
1.26
1.285
V
ACSET Input Bias Current Hysteresis
2
3.4
4.8
μ
A
ACSET Input Bias Current
ACSET > 1.26V
2
3.4
4.8
μ
A
ACSET Input Bias Current
ACSET < 1.26V
-1
0
1
μ
A
DCSET Threshold
1.235
1.26
1.285
V
ISL6253