參數(shù)資料
型號(hào)： ISL54049IRUZ-T
廠商： INTERSIL CORP
元件分類： 運(yùn)動(dòng)控制電子
英文描述： Ultra Low ON-Resistance, +1.65V to +4.5V, Single Supply, Dual SPST Analog Switch
中文描述： DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, QCC10
封裝： 1.8 X 1.4 MM, 0.5 MM HEIGHT, ROHS COMPLIANT, PLASTIC, MO-255, MICRO, TQFN-10
文件頁(yè)數(shù)： 3/12頁(yè)
文件大小： 254K
代理商： ISL54049IRUZ-T
3
FN6469.0
March 20, 2007
Absolute Maximum Ratings
Thermal Information
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 4.7V
Input Voltages
NO, NC, IN (Note 2). . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V)
Output Voltages
COM (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V)
Continuous Current NO, NC, or COM . . . . . . . . . . . . . . . . .
±
300mA
Peak Current NO, NC, or COM
(Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . . .
±
500mA
ESD Rating:
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7). . . .>8kV
Machine Model (Per EIAJ ED-4701 Method C-111). . . . . . .>500V
Charged Device Model (Per EOS/ESD DS5.3, 4/14/93) . . >1.4kV
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
Thermal Resistance (Typical)
10 Ld
μ
TQFN Package (Note 3) . . . . . . . . . . . . . . .
Maximum Junction Temperature (Plastic Package). . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to +150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . +300°C
(Lead Tips Only)
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
θ
JA
(°C/W)
143
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
2. Signals on NC, NO, IN, or COM exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings.
3.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications - 4.3V Supply
Test Conditions: V+ = +3.9V to +4.5V, GND = 0V, V
INH
= 1.6V, V
INL
= 0.5V (Notes 4),
Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
TEMP
(°C)
(NOTE 5)
MIN
TYP
(NOTE 5)
MAX
UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ANALOG
Full
0
-
V+
V
ON-Resistance, r
ON
V+ = 3.9V, I
COM
= 100mA, V
NO
or V
NC
= 0V to V+,
(See Figure 4)
25
-
0.30
-
Ω
Full
-
0.35
-
Ω
r
ON
Matching Between Channels,
Δ
r
ON
V+ = 3.9V, I
COM
= 100mA, V
NO
or V
NC
= Voltage at max
r
ON,
(Note 7)
25
-
0.06
-
Ω
Full
-
0.08
-
Ω
r
ON
Flatness, r
FLAT(ON)
V+ = 3.9V, I
COM
= 100mA, V
NO
or V
NC
= 0V to V+,
(Note 6)
25
-
0.03
-
Ω
Full
-
0.04
-
Ω
NO or NC OFF Leakage Current,
I
NO(OFF)
or I
NC(OFF)
V+ = 4.5V, V
COM
= 0.3V, 3V, V
NO
or V
NC
= 3V, 0.3V
25
-100
-
100
nA
Full
-195
-
195
nA
COM ON Leakage Current,
I
COM(ON)
V+ = 4.5V, V
COM
= 0.3V, 3V, or V
NO
or V
NC
= 0.3V,
3V, or floating
25
-100
-
100
nA
Full
-195
-
195
nA
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
ON
V+ = 3.9V, V
NO
or V
NC
= 3.0V, R
L
=50
Ω
,
C
L
= 35pF,
(See Figure 1)
25
-
40
-
ns
Full
-
50
-
ns
Turn-OFF Time, t
OFF
V+ = 3.9V, V
NO
or V
NC
= 3.0V, R
L
=50
Ω
,
C
L
= 35pF,
(See Figure 1)
25
-
20
-
ns
Full
-
30
-
ns
Charge Injection, Q
C
L
= 1.0nF, V
G
= 0V, R
G
= 0
Ω,
See Figure 2
25
-
170
-
pC
OFF Isolation
R
L
= 50
Ω
,
C
L
= 5pF, f = 100kHz, V
COM
= 1V
RMS
,
(See Figure 3)
25
-
62
-
dB
Crosstalk (Channel-to-Channel)
R
L
= 50
Ω
,
C
L
= 5pF, f = 100kHz, V
COM
= 1V
RMS
,
(See Figure 5)
25
-
-85
-
dB
Total Harmonic Distortion
f = 20Hz to 20kHz, V
COM
= 2V
P-P
, R
L
= 600
Ω
25
-
0.005
-
%
ISL54048, ISL54049
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