參數(shù)資料
型號: IS61VF102436A-6.5B3I
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: SRAM
英文描述: 1M X 36 CACHE SRAM, 6.5 ns, PBGA165
封裝: 13 X 15 MM, PLASTIC, BGA-165
文件頁數(shù): 1/20頁
文件大?。?/td> 386K
代理商: IS61VF102436A-6.5B3I
Integrated Silicon Solution, Inc.
1
Rev. B
04/17/08
IS61LF102436A IS61VF102436A
IS61LF204818A IS61VF204818A
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
FEATURES
Internalself-timedwritecycle
IndividualByteWriteControlandGlobalWrite
Clockcontrolled,registeredaddress,dataand
control
BurstsequencecontrolusingMODEinput
Three chip enable option for simple depth expan-
sion and address pipelining
Commondatainputsanddataoutputs
AutoPower-downduringdeselect
Singlecycledeselect
SnoozeMODEforreduced-powerstandby
PowerSupply
LF: Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5%
VF: Vdd 2.5V + 5%, Vddq 2.5V + 5%
JEDEC100-PinTQFPand165-pinPBGApack-
ages.
Lead-freeavailable
APRIL 2008
1M x 36, 2M x 18
36Mb SYNCHRONOUS FLOW-THROUGH
STATIC RAM
DESCRIPTION
The
ISSI IS61LF/VF102436A and IS61LF/VF204818A
are high-speed, low-power synchronous static RAMs de-
signed to provide burstable, high-performance memory for
communication and networking applications.The IS61LF/
VF102436Aisorganizedas1,048,476wordsby36bits.
The IS61LF/VF204818Aisorganizedas2M-wordsby18
bits. Fabricated with
ISSI'sadvancedCMOStechnology,
the device integrates a 2-bit burst counter, high-speed
SRAMcore,andhigh-drivecapabilityoutputsintoasingle
monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single
clock input.
Writecyclesareinternallyself-timedandareinitiatedbythe
risingedgeoftheclockinput.Writecyclescanbeoneto
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Bytewriteoperationisperformedbyusingbytewriteen-
able (BWE) input combined with one or more individual
byte write signals (BWx). Inaddition,GlobalWrite(GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
BurstscanbeinitiatedwitheitherADSP (Address Status
Processor)orADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be gener-
ated internally and controlled by the ADV (burst address
advance) input pin.
Themodepinisusedtoselecttheburstsequenceorder,
LinearburstisachievedwhenthispinistiedLOW.Inter-
leaveburstisachievedwhenthispinistiedHIGHorleft
floating.
FAST ACCESS TIME
Symbol
Parameter
-6.5
-7.5
Units
tkq
ClockAccessTime
6.5
7.5
ns
tkc
CycleTime
7.5
8.5
ns
Frequency
133
117
MHz
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IS61VF51236A-6.5B3 功能描述:靜態(tài)隨機存取存儲器 18Mb,Flow-Through,Sync,512K x 36,6.5ns,2.5v I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61VF51236A-6.5B3I 功能描述:靜態(tài)隨機存取存儲器 18Mb,Flow-Through,Sync,512K x 36,6.5ns,2.5v I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61VF51236A-6.5B3I-TR 功能描述:靜態(tài)隨機存取存儲器 18Mb,Flow-Through,Sync,512K x 36,6.5ns,2.5v I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61VF51236A-6.5B3-TR 功能描述:靜態(tài)隨機存取存儲器 18Mb,Flow-Through,Sync,512K x 36,6.5ns,2.5v I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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