參數資料
型號: IS61LPD25636A-200TQ
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: SRAM
英文描述: 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
中文描述: 256K X 36 CACHE SRAM, 3.1 ns, PQFP100
封裝: TQFP-100
文件頁數: 11/32頁
文件大?。?/td> 311K
代理商: IS61LPD25636A-200TQ
Integrated Silicon Solution, Inc. — 1-800-379-4774
19
Rev. B
12/13/06
IS61VPD25636A, IS61VPD51218A, IS61LPD25636A, IS61LPD51218A
ISSI
IEEE 1149.1 SERIAL BOUNDARY SCAN (JTAG)
The IS61LPD/VPD25636A and IS61LPD/VPD51218A have
a serial boundary scan Test Access Port (TAP) in the PBGA
package only. (The TQFP package not available.) This port
operates in accordance with IEEE Standard 1149.1-1900,
but does not include all functions required for full 1149.1
compliance. These functions from the IEEE specification are
excluded because they place added delay in the critical
speed path of the SRAM. The TAP controller operates in a
manner that does not conflict with the performance of other
devices using 1149.1 fully compliant TAPs. The TAP
operates using JEDEC standard 2.5V I/O logic levels.
DISABLING THE JTAG FEATURE
The SRAM can operate without using the JTAG feature. To
disable the TAP controller, TCK must be tied LOW (Vss) to
prevent clocking of the device. TDI and TMS are internally
pulled up and may be disconnected. They may alternately
be connected to VDD through a pull-up resistor. TDO should
be left disconnected. On power-up, the device will start in a
reset state which will not interfere with the device operation.
TEST ACCESS PORT (TAP) - TEST CLOCK
The test clock is only used with the TAP controller. All
inputs are captured on the rising edge of TCK and outputs
are driven from the falling edge of TCK.
TEST MODE SELECT (TMS)
The TMS input is used to send commands to the TAP
controller and is sampled on the rising edge of TCK. This
pin may be left disconnected if the TAP is not used. The
pin is internally pulled up, resulting in a logic HIGH level.
TEST DATA-IN (TDI)
The TDI pin is used to serially input information to the
registers and can be connected to the input of any
register. The register between TDI and TDO is chosen by
the instruction loaded into the TAP instruction register.
For information on instruction register loading, see the
TAP Controller State Diagram. TDI is internally pulled up
and can be disconnected if the TAP is unused in an
application. TDI is connected to the Most Significant Bit
(MSB) on any register.
31 30 29
. . . 2 1 0
2
1
0
x
. . . . . 2 1 0
Bypass Register
Instruction Register
Identification Register
Boundary Scan Register*
TAP CONTROLLER
Selection Circuitry
TDO
TDI
TCK
TMS
TAP CONTROLLER BLOCK DIAGRAM
相關PDF資料
PDF描述
IS61LPD25636A-200TQ2I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQI 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-250B2 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD51236A-200B3 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
相關代理商/技術參數
參數描述
IS61LPD25636A-200TQ2I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200TQLI 功能描述:靜態(tài)隨機存取存儲器 8M (256Kx36) 200MHz Sync 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LPD25636A-200TQLI-TR 功能描述:靜態(tài)隨機存取存儲器 8M (256Kx36) 200MHz Sync 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LPD25636A-250B2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM