- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299227 > IS42LS16800A-10BI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IS42LS16800A-10BI |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁(yè)數(shù)： | 7/66頁(yè) |
| 文件大小： | 556K |
| 代理商： | IS42LS16800A-10BI |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
15
ADVANCEDINFORMATION
Rev. 00A
06/01/02
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
CS
RAS
RAS CAS
CAS
WE
Address
Command
Action
Write Recovering
H
×
DESL
Nop Enter row active after tDPL
L
H
×
NOP
Nop Enter row active after tDPL
L
H
L
×
BST
Nop Enter row active after tDPL
L
H
L
H
BA, CA, A10
READ/READA
Begin read (6)
L
H
L
BA, CA, A10
WRIT/ WRITA
Begin new write
L
H
BA, RA
ACT
ILLEGAL (2)
L
H
L
BA, A10
PRE/PALL
ILLEGAL (2)
L
H
×
REF
ILLEGAL
L
OC, BA
MRS/EMRS
ILLEGAL
Write Recovering
H
×
DESL
Nop Enter precharge after tDPL
with Auto
L
H
×
NOP
Nop Enter precharge after tDPL
Precharge
L
H
L
×
BST
Nop Enter row active after tDPL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL (2, 6)
L
H
BA, RA
ACT
ILLEGAL (2)
L
H
L
BA, A10
PRE/PALL
ILLEGAL (2)
L
H
×
REF
ILLEGAL
L
OC, BA
MRS/EMRS
ILLEGAL
Refresh
H
×
DESL
Enter idle after tRC1
L
H
×
NOP
Nop Enter idle after tRC1
L
H
L
×
BST
Nop Enter idle after tRC1
L
H
L
H
BA, CA, A10
EAD/READA
ILLEGAL
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
L
H
L
BA, A10
PRE/PALL
ILLEGAL
L
H
×
REF
ILLEGAL
L
OC, BA
MRS/EMRS
ILLEGAL
Mode Register
H
×
DESL
Nop Enter idle after tRSC
Accessing
L
H
×
NOP
Nop Enter idle after tRSC
L
H
L
×
BST
Nop Enter idle after tRSC
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
L
H
L
BA, A10
PRE/PALL
ILLEGAL
L
H
×
REF
ILLEGAL
L
OC, BA
MRS/EMRS
ILLEGAL
FUNCTIONAL TRUTH TABLE Continued:
Note: H=VIH, L=VIL x= VIH or VIL, V = Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S81600A-7T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-7TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS61LF51218D-8.5TQ | 512K X 18 CACHE SRAM, 8.5 ns, PQFP100 |
| IS61LPD25636A-200B2 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200B2I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42LS16800A-10T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS16800A-10TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS16800A-7B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS16800A-7BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS16800A-7T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。