- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299227 > IS32WV10008ALL-85BI (INTEGRATED SILICON SOLUTION INC) 1M X 8 PSEUDO STATIC RAM, 85 ns, PBGA48 PDF資料下載
參數(shù)資料
| 型號： | IS32WV10008ALL-85BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | SRAM |
| 英文描述： | 1M X 8 PSEUDO STATIC RAM, 85 ns, PBGA48 |
| 封裝： | 6 X 8 MM, BGA-48 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 53K |
| 代理商： | IS32WV10008ALL-85BI |
IS32WV10008ALL,
IS32WV10008BLL
ISSI
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/15/02
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
55 ns
70 ns
85 ns
100 ns
Symbol
Parameter
Min. Max.
Min.Max.
Min. Max.
Unit
tWC
Write Cycle Time
55
—
70
—
85
—
100
—
ns
tSCS1/tSCS2 CS1/CS2 to Write End
45
—
60
—
65
—
70
—
ns
tAW
Address Setup Time to Write End
45
—
60
—
65
—
70
—
ns
tHA
Address Hold from Write End
0
—
0
—
0
—
0
—
ns
tSA
Address Setup Time
0
—
0
—
0
—
0
—
ns
tPWE
WE Pulse Width
40
—
50
—
60
—
60
—
ns
tSD
Data Setup to Write End
25
—
30
—
35
—
40
—
ns
tHD
Data Hold from Write End
0
—
0
—
0
—
0
—
ns
tHZWE(3)
WE LOW to High-Z Output
—
20
—
20
—
20
—
20
ns
tLZWE(3)
WE HIGH to Low-Z Output
5
—
5
—
5
—
5
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4V to 1.4V
and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CS1 LOW, CS2 HIGH and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the
write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
WRITE CYCLE NO. 1 (
CS1/CS2 Controlled, OE = HIGH or LOW)
DATA-IN VALID
DATA UNDEFINED
tWC
tSCS1
tSCS2
tAW
tHA
tPWE
tHZWE
HIGH-Z
tLZWE
tSA
tSD
tHD
ADDRESS
CS1
CS2
WE
DOUT
DIN
相關PDF資料 |
PDF描述 |
|---|---|
| IS42LS16800A | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS16800A-10B | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS16800A-10BI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-7T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-7TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS32WV204816B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 16 (32-Mbit) PSEUDO STATIC RAM |
| IS32WV204816B-70BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 16 (32-Mbit) PSEUDO STATIC RAM |
| IS32WV204816B-70MI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 16 (32-Mbit) PSEUDO STATIC RAM |
| IS33 | 制造商:IDEC Corporation 功能描述:SEMS.IND. 10-30VDC PNP NO |
| IS3302-02XXXPFR | 制造商:MARCO 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。