參數(shù)資料
型號(hào): IRS23364DPBF
廠商: International Rectifier
英文描述: HIGH VOLTAGE 3 PHASE GATE DRIVER IC
中文描述: 3相高壓柵極驅(qū)動(dòng)器集成電路
文件頁(yè)數(shù): 33/45頁(yè)
文件大小: 952K
代理商: IRS23364DPBF
IRS2336xD Family
www.irf.com
2007 International Rectifier
33
Ground Plane: In order to minimize noise coupling, the ground plane should not be placed under or near the high
voltage floating side.
Gate Drive Loops: Current loops behave like antennas and are able to receive and transmit EM noise (see Figure
34). In order to reduce the EM coupling and improve the power switch turn on/off performance, the gate drive loops
must be reduced as much as possible. Moreover, current can be injected inside the gate drive loop via the IGBT
collector-to-gate parasitic capacitance. The parasitic auto-inductance of the gate loop contributes to developing a
voltage across the gate-emitter, thus increasing the possibility of a self turn-on effect.
Figure 34: Antenna Loops
Supply Capacitor: It is recommended to place a bypass capacitor (C
IN
) between the V
CC
and V
SS
pins. This
connection is shown in Figure 35. A ceramic 1
μ
F ceramic capacitor is suitable for most applications. This
component should be placed as close as possible to the pins in order to reduce parasitic elements.
Figure 35: Supply capacitor
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