參數(shù)資料
型號(hào)： IRS23364DJPBF
廠(chǎng)商： International Rectifier
英文描述： HIGH VOLTAGE 3 PHASE GATE DRIVER IC
中文描述： 3相高壓柵極驅(qū)動(dòng)器集成電路
文件頁(yè)數(shù)： 34/45頁(yè)
文件大小： 952K
代理商： IRS23364DJPBF
IRS2336xD Family
www.irf.com
2007 International Rectifier
34
Routing and Placement: Power stage PCB parasitic elements can contribute to large negative voltage transients at
the switch node; it is recommended to limit the phase voltage negative transients. In order to avoid such conditions,
it is recommended to 1) minimize the high-side emitter to low-side collector distance, and 2) minimize the low-side
emitter to negative bus rail stray inductance. However, where negative V
S
spikes remain excessive, further steps
may be taken to reduce the spike. This includes placing a resistor (5
or less) between the V
S
pin and the switch
node (see Figure 36), and in some cases using a clamping diode between V
SS
and V
S
(see Figure 37). See DT04-4
at
www.irf.com
for more detailed information.
Figure 36: V
S
resistor
Figure 37: V
S
clamping diode
Additional Documentation
Several technical documents related to the use of HVICs are available at
www.irf.com
; use the Site Search
function and the document number to quickly locate them. Below is a short list of some of these documents.
DT97-3: Managing Transients in Control IC Driven Power Stages
AN-1123: Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality
DT04-4: Using Monolithic High Voltage Gate Drivers
AN-978: HV Floating MOS-Gate Driver ICs
相關(guān)PDF資料
PDF描述
IRS23364DJTRPBF HIGH VOLTAGE 3 PHASE GATE DRIVER IC
IRS23364DPBF HIGH VOLTAGE 3 PHASE GATE DRIVER IC
IRS23364DSPBF HIGH VOLTAGE 3 PHASE GATE DRIVER IC
IRS23364DSTRPBF HIGH VOLTAGE 3 PHASE GATE DRIVER IC
IRS2336D HIGH VOLTAGE 3 PHASE GATE DRIVER IC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRS23364DJPBF 制造商:International Rectifier 功能描述:Driver IC
IRS23364DJTRPBF 功能描述:功率驅(qū)動(dòng)器IC 600V 3Phs Drvr w/Gt Drv 12-20V NegVs Tol RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS23364DPBF 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC
IRS23364DSPBF 功能描述:功率驅(qū)動(dòng)器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS23364DSTRPBF 功能描述:功率驅(qū)動(dòng)器IC 600V 3Phs Drvr w/Gt Drv 12-20V NegVs Tol RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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