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參數(shù)資料
| 型號(hào)： | IRS23364D |
| 廠商： | International Rectifier |
| 英文描述： | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| 中文描述： | 3相高壓柵極驅(qū)動(dòng)器集成電路 |
| 文件頁數(shù)： | 28/45頁 |
| 文件大?。?/td> | 952K |
| 代理商： | IRS23364D |
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IRS2336xD Family
www.irf.com
2007 International Rectifier
28
The difference between the PW
OUT
and PW
IN
signals of both the narrow ON and narrow OFF cases is shown in
Figure 21; the careful reader will note the scale of the y-axis. The x-axis of Figure 21 shows the duration of PW
IN
,
while the y-axis shows the resulting PW
OUT
–PW
IN
duration. This data illustrates the performance and near symmetry
of this input filter.
Narrow Pulse OFF
0
200
400
600
800
1000
0
200
400
600
800
1000
Time (ns)
T
PW
OUT
IN
Figure 20: IRS2336xD input filter characteristic
Figure 21: Difference between the input pulse and the output pulse
Integrated Bootstrap Functionality
The new IRS2336xD family features integrated high-voltage bootstrap MOSFETs that eliminate the need of the
external bootstrap diodes and resistors in many applications.
There is one bootstrap MOSFET for each high-side output channel and it is connected between the V
CC
supply and
its respective floating supply (i.e., V
B1
, V
B2
, V
B3
); see Figure 22 for an illustration of this internal connection.
The integrated bootstrap MOSFET is turned on only during the time when LO is ‘high’, and it has a limited source
current due to R
BS
. The V
BS
voltage will be charged each cycle depending on the on-time of LO and the value of the
C
BS
capacitor, the drain-source (collector-emitter) drop of the external IGBT (or MOSFET), and the low-side free-
wheeling diode drop.
The bootstrap MOSFET of each channel follows the state of the respective low-side output stage (i.e., the bootstrap
MOSFET is ON when LO is high, it is OFF when LO is low), unless the V
B
voltage is higher than approximately
110% of V
CC
. In that case, the bootstrap MOSFET is designed to remain off until V
B
returns below that threshold; this
concept is illustrated in Figure 23.
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| IRS23364DJPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364DJTRPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364DPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364DSPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364DSTRPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRS23364DJPBF | 功能描述:功率驅(qū)動(dòng)器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS23364DJPBF | 制造商:International Rectifier 功能描述:Driver IC |
| IRS23364DJTRPBF | 功能描述:功率驅(qū)動(dòng)器IC 600V 3Phs Drvr w/Gt Drv 12-20V NegVs Tol RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS23364DPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364DSPBF | 功能描述:功率驅(qū)動(dòng)器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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