參數(shù)資料
型號: IRS2168DPBF
廠商: International Rectifier
英文描述: ADVANCED PFC + BALLAST CONTROL IC
中文描述: 先進PFC的鎮(zhèn)流器控制IC
文件頁數(shù): 6/21頁
文件大小: 313K
代理商: IRS2168DPBF
IRS2168D(S)PbF
www.irf.com Page 6
Electrical Characteristics (cont’d)
V
CC
= V
= V
BIAS
=14 V +/- 0.25 V, C
LO
= C
= C
PFC
= 1000 pF, R
FMIN
= 42.2 k
, R
PH
= N/C, V
CPH
= V
VCO
= 0 V,
V
SD/EOL
= V
COMP
= V
CS
= V
OC
= V
BUS
= V
ZX
= 0 V, T
A
=25
C unless otherwise specified.
Gate Driver Output Characteristics (HO, LO and PFC pins)
V
OL
Low-level output voltage
---
COM
---
V
OH
High-level output voltage
---
V
CC
---
V
t
r
Turn-on rise time
---
120
220
t
f
Turn-off fall time
---
50
100
ns
I
0+
Source current
---
180
---
I
0-
Sink current
---
260
---
mA
Bootstrap FET Characteristics
V
B/ON
V
B
when the bootstrap FET is on
13.0
13.4
---
V
I
B/CAP
V
B
source current when FET is on
40
55
---
C
BS
=0.1 μF
I
B/10V
V
B
source current when FET is on
9
12
---
mA
V
B
=10 V
相關(guān)PDF資料
PDF描述
IRS2168DSPBF ADVANCED PFC + BALLAST CONTROL IC
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IRS21952STRPBF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
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