- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384508 > IRLZ34N (International Rectifier) HEXFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRLZ34N |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 114K |
| 代理商： | IRLZ34N |
HEXFET
Power MOSFET
IRLZ34N
PD - 9.1307B
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
l
Logic-Level Gate Drive
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
V
DSS
= 55V
R
DS(on)
= 0.035
I
D
= 30A
S
D
G
TO-220AB
8/25/97
Parameter
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
2.2
––––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
Parameter
Max.
30
21
110
68
0.45
±16
110
16
6.8
5.0
-55 to + 175
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLZ44N | Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) |
| IRLZ44S | Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A) |
| IRLZ44ZLPBF | AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5mヘ , ID = 51A) |
| IRLZ44ZPBF | AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5mヘ , ID = 51A) |
| IRLZ44ZSPBF | AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5mヘ , ID = 51A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLZ34N,127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 30A 3-Pin(3+Tab) TO-220AB Tube |
| IRLZ34N-002HR | 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
| IRLZ34N-010HR | 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
| IRLZ34NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 30A 3-Pin(3+Tab) TO-220AB |
| IRLZ34NL | 功能描述:MOSFET N-CH 55V 30A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。