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參數(shù)資料
| 型號： | IRLU4343-701 |
| 廠商： | International Rectifier |
| 英文描述： | DIGITAL AUDIO MOSFET |
| 中文描述： | 數(shù)字音頻MOSFET的 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 255K |
| 代理商： | IRLU4343-701 |
www.irf.com
5
Fig 13.
Maximum Avalanche Energy Vs. Drain Current
Fig 12.
On-Resistance Vs. Gate Voltage
Fig 14.
Typical Avalanche Current Vs.Pulsewidth
Fig 15.
Maximum Avalanche Energy Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
0
100
200
300
400
500
600
700
EA
ID
TOP
2.4A
3.3A
BOTTOM
19A
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
0
50
100
150
200
RD
)
TJ = 25°C
TJ = 125°C
ID = 19A
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
0.1
1
10
100
1000
A
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
tav
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
140
160
180
EA
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 19A
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