- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299227 > IRLR3715ZCPBFTR 49 A, 20 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA PDF資料下載
參數(shù)資料
| 型號： | IRLR3715ZCPBFTR |
| 元件分類： | JFETs |
| 英文描述： | 49 A, 20 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, DPAK-3 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 297K |
| 代理商： | IRLR3715ZCPBFTR |
IRLR/U3715ZCPbF
8
www.irf.com
Control FET
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the R
ds(on) of the
MOSFET, but these conduction losses are only about
one half of the total losses.
Power losses in the control switch Q1 are given
by;
P
loss = Pconduction+ Pswitching+ Pdrive+ Poutput
This can be expanded and approximated by;
P
loss =
I
rms
2
× R
ds(on )
()
+ I ×
Q
gd
i
g
× V
in × f
+ I ×
Q
gs 2
i
g
× V
in × f
+ Q
g × Vg × f
()
+
Q
oss
2
×V
in × f
This simplified loss equation includes the terms Q
gs2
and Q
oss which are new to Power MOSFET data sheets.
Q
gs2 is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Q
gs1 and Qgs2, can be seen from
Fig 16.
Q
gs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached and the time the drain cur-
rent rises to I
dmax at which time the drain voltage be-
gins to change. Minimizing Q
gs2 is a critical factor in
reducing switching losses in Q1.
Q
oss is the charge that must be supplied to the out-
put capacitance of the MOSFET during every switch-
ing cycle. Figure A shows how Q
oss is formed by the
parallel combination of the voltage dependant (non-
linear) capacitances C
ds and Cdg when multiplied by
the power supply input buss voltage.
Synchronous FET
The power loss equation for Q2 is approximated
by;
P
loss = Pconduction + Pdrive + Poutput
*
P
loss =
I
rms
2 × R
ds(on)
()
+ Q
g × Vg × f
()
+
Q
oss
2
× V
in × f
+ Q
rr × Vin × f
(
)
*dissipated primarily in Q1.
For the synchronous MOSFET Q2, R
ds(on) is an im-
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q
oss and re-
verse recovery charge Q
rr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and V
in. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Q
gd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
Power MOSFET Selection for Non-Isolated DC/DC Converters
Figure A: Q
oss Characteristic
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLU024PBF | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| IRM-2638S18 | LOGIC OUTPUT PHOTO DETECTOR |
| IRM-3638N3F6 | LOGIC OUTPUT PHOTO DETECTOR |
| IRM-3638 | LOGIC OUTPUT PHOTO DETECTOR |
| IRM0118LC1B | 1000 MHz - 18000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 14 dB CONVERSION LOSS-MAX |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLR3715ZCTRLP | 功能描述:MOSFET MOSFET, 20V, 49A, 11 mOhm, 7.2 nC Qg, Logic Level, D-Pak RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR3715ZCTRPBF | 功能描述:MOSFET MOSFET, 20V, 49A, 11 mOhm, 7.2 nC Qg, Logic Level, D-Pak RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR3715ZHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 49A 3-Pin(2+Tab) DPAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 49A 3PIN DPAK - Bulk |
| IRLR3715ZPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 11mOhms 7.2nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR3715ZTR | 功能描述:MOSFET N-CH 20V 49A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。