- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385447 > IRLI3215PBF (International Rectifier) 68/MDR/RECP/VERT PRS FIT/M2.6/SCW/30 MIN PDF資料下載
參數(shù)資料
| 型號(hào)： | IRLI3215PBF |
| 廠商： | International Rectifier |
| 英文描述： | 68/MDR/RECP/VERT PRS FIT/M2.6/SCW/30 MIN |
| 中文描述： | 先進(jìn)的工藝技術(shù) |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 222K |
| 代理商： | IRLI3215PBF |
2
www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 4.9mH
R
G
= 25
, I
AS
= 7.2A. (See Figure 12)
I
SD
≤
7.2A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4.
Uses IRL3215 data and test conditions.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 7.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 7.2A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
160
810 1210
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
1.3
240
V
ns
nC
Source-Drain Ratings and Characteristics
12
48
Min. Typ. Max. Units
150
–––
–––
0.20
–––
––– 0.166
–––
––– 0.184
–––
––– 0.208
1.0
–––
8.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.4
–––
45
–––
38
–––
36
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 7.2A
V
GS
= 5.0V, I
D
= 7.2A
V
GS
= 4.0V, I
D
= 6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 7.2A
V
DS
= 150V, V
GS
= 0V
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 7.2A
V
DS
= 120V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 75V
I
D
= 7.2A
R
G
= 12
,
V
GS
= 5.0V
R
D
= 10.2
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
–––
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.0
–––
25
250
100
-100
35
4.1
21
–––
–––
–––
–––
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
775
140
70
–––
–––
–––
pF
nH
I
GSS
S
D
G
L
S
Internal Source Inductance
–––
7.5
–––
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance
4.5
I
DSS
Drain-to-Source Leakage Current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLI520G | HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管) |
| IRLI540NPBF | HEXFET Power MOSFET |
| IRLI640GPBF | HEXFET Power MOSFET |
| IRLIZ34NPBF | HEXFET Power MOSFET |
| IRLL014 | HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLI3303 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLI3615 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLI3615HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 14A 3-Pin(3+Tab) TO-220 |
| IRLI3615PBF | 制造商:International Rectifier 功能描述:MOSFET N 150V 14A TO-220FP |
| IRLI3705 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:HEXFET Power MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。