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參數(shù)資料
| 型號(hào)： | IRL7NJ3802 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | HEXFET功率MOSFET的表面貼裝系統(tǒng)（SMD - 0.5） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 136K |
| 代理商： | IRL7NJ3802 |
IRL7NJ3802
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
2.5
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
22*
88
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
40
40
V
nS
nC
T
j
= 25°C, IS = 22A, VGS = 0V
Tj = 25°C, IF = 22A, di/dt
≤
100A/
μ
s
VDD
≤
6.0V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
12
—
Typ
—
0.009
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.6
42
—
—
—
—
—
—
—
—
0.0085
0.03
1.9
—
100
250
VGS = 4.5V, ID = 22A
VGS = 2.8V, ID = 22A
VDS = VGS, ID = 250
μ
A
VDS = 6.0V, IDS = 22A
VDS = 9.6V ,VGS=0V
VDS = 9.6V,
VGS = 0V, TJ =125°C
VGS = 12V
VGS = -12V
VGS =4.5V, ID = 22A
VDS = 6.0V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
41
12
10.5
15
115
30
25
—
nC
VDD = 6.0V, ID = 22A,
VGS = 4.5V, RG = 6.0
Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Rg Gate Resistance — 1.9 —
f = 1.33MHz, open drain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2470
2130
500
—
—
—
VGS = 0V, VDS = 6.0V
f = 1.0MHz
pF
nA
nH
ns
μ
A
* Current is limited by package
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