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參數(shù)資料
| 型號： | IRKV250-10 |
| 英文描述： | 1000V 250A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a MAGN-A-Pak package |
| 中文描述： | 1000V 250A章中心抽頭共陽極相位控制晶閘管/晶閘管的磁共振- à - Pak封裝 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 381K |
| 代理商： | IRKV250-10 |
IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
3
www.irf.com
Thermal and Mechanical Specifications
T
J
Max. junction operating
temperature range
Max. storage temperature
range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting
torque ± 10% busbar to IAP
Approximate weight
Case Style
-40 to 125
°C
T
stg
-40 to 150
°C
R
thJC
0.18
0.18
0.16
K/W
DC operation, per junction
R
thCS
0.05
K/W
Mounting surface smooth, flat and greased
Per module
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
T
IAP to heatsink
4 to 6
4 to 6
200 (7.1)
New Int-A-Pak
Nm
wt
g(oz)
Triggering
P
GM
P
G(AV)
Max. average gate power
Max. peak gate power
12
W
tp
≤
5ms, T
J
= T
J
max.
f=50Hz, T
J
= T
J
max.
tp
≤
5ms, T
J
= T
J
max.
3
W
I
GM
-V
GT
Max. peak gate current
3
A
Max. peak negative
10
V
gate voltage
V
GT
Max. required DC gate
voltage to trigger
4
V
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
@ T
J
= T
J
max., rated V
DRM
applied
Anode supply = 6V, resistive
load; Ra = 1
2.5
1.7
270
150
80
0.3
I
GT
Max. required DC gate
current to trigger
Anode supply = 6V, resistive
load; Ra = 1
mA
V
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Max. rate of rise of
turned-on current
V
I
GD
10
mA
di/
dt
300
A/μs
@ T
J
= T
J
max., I
TM
= 400A
rated V
DRM
applied
Sinusoidal conduction @ T
J
max.
120
o
90
o
Rectangular conduction @ T
J
max.
120
o
90
o
Devices
Units
180
o
60
o
30
o
180
o
60
o
30
o
IRK.136
0.007
0.01
0.013
0.0155
0.017
0.009
0.012
0.014
0.015
0.017
IRK.142
0.0019
0.0019
0.0020
0.0020
0.0021
0.0018
0.0022
0.0023
0.0023
0.0020 K/W
IRK.162
0.0030
0.0031
0.0032
0.0033
0.0034
0.0029
0.0036
0.0039
0.0041
0.0040
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Parameter
IRK.136
IRK.142
IRK.162
Units Conditions
Parameter
IRK.136
IRK.142
IRK.162
Units Conditions
Blocking
I
RRM
I
DRM
Maximum peak reverse and
off-state leakage current
50
mA
T
J
= 125
o
C
V
INS
RMS isolation voltage
3500
V
50Hz, circuit to base, all terminals shorted, t = 1s
dV/dt critical rate of rise of off-state voltage
1000
V/μs
T
J
= T
J
max., exponential to 67% rated V
DRM
相關PDF資料 |
PDF描述 |
|---|---|
| IRKV250-12 | 1200V 250A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a MAGN-A-Pak package |
| IRKL142-12 | THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| IRKT136-12 | THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| IRK.136 | THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| IRK.142 | THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRKV250-10N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|1KV V(RRM)|250A I(T) |
| IRKV250-12 | 功能描述:SCR模塊 1200 Volt 250 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復關閉狀態(tài)電壓 VDRM:1.6 kV 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風格:Chassis 封裝 / 箱體:INT-A-PAK |
| IRKV250-12D20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|250A I(T) |
| IRKV250-12D20N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|250A I(T) |
| IRKV250-12N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|250A I(T) |
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