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參數(shù)資料
| 型號： | IRKV105/12AS90 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 165 A, 1200 V, SCR, TO-240AA |
| 封裝： | ADD-A-PAK-7 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 141K |
| 代理商： | IRKV105/12AS90 |
IRKU/V105 Series
Bulletin I27136 rev. E 10/02
Fig. 10 - Recovery Charge Characteristics
Fig. 11 - Recovery Current Characteristics
Fig. 12 - Thermal Impedance Z
thJC
Characteristics
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
JC
Tr
a
n
sie
n
tT
h
e
rma
lImp
e
d
a
n
c
e
Z
(K
/W
)
IRK.105.. Series
Per Junction
Steady State Value:
R
= 0.27 K/W
(DC Operation)
thJC
20
40
60
80
100
120
140
10 20 30 40 50 60 70 80 90 100
M
a
xi
m
um
R
e
ve
rs
e
Re
c
o
ve
ry
C
urr
e
n
t-
Ir
r(
A
)
Rate Of Fall Of Forward Current - di/dt (A/s)
100 A
50 A
I
= 200 A
TM
20 A
10 A
IRK.105.. Series
T = 125 °C
J
100
200
300
400
500
600
700
10 20 30 40 50 60 70 80 90 100
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/s)
M
a
xi
m
u
m
Re
ve
rse
R
e
c
ove
ry
C
h
a
rg
e
-
Q
rr
(
C
)
I
= 200 A
TM
20 A
10 A
IRK.105.. Series
T = 125 °C
J
Fig. 13- Gate Characteristics
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
(b)
(a)
(4)
(3) (2)
(1)
Instantaneous Gate Current (A)
In
sta
n
ta
ne
o
us
G
a
te
V
o
lta
g
e
(V
)
TJ
=
-4
0
°C
TJ
=
25
°C
TJ
=
125
°C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
(1) PGM = 200 W, tp = 300 s
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 s, tp >= 6 s
rated di/dt: 20 V, 20 ohms
tr = 0.5 s, tp >= 6 s
Rectangular gate pulse
IRK.105.. Series
Document Number: 93751
www.vishay.com
7
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| IRKV132-08 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|800V V(RRM)|130A I(T) |
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