- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224020 > IRKT106/12P (VISHAY INTERTECHNOLOGY INC) 235 A, 1200 V, SCR, TO-240AA PDF資料下載
參數(shù)資料
| 型號： | IRKT106/12P |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 235 A, 1200 V, SCR, TO-240AA |
| 封裝： | LEAD FREE, ADD-A-PAK-7 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 232K |
| 代理商： | IRKT106/12P |
IRK.105..P Series
Bulletin I27215 01/07
T
J
Junction operating
temperature range
Tstg
Storage temp. range
- 40 to 150
R
thJC
Max. internal thermal
resistance, junction
0.135
Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRK.105
Units
Conditions
- 40 to 130
0.1
5
(5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90.
°C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
20
mA
T
J = 130
o
C, gate open circuit
at VRRM, VDRM
V
INS
RMS isolation voltage
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
T
J = 130
o
C, linear to 0.67 V
DRM,
of off-state voltage (5)
gate open circuit
500
V/μs
Triggering
Blocking
V
P
GM
Max. peak gate power
12
P
G(AV) Max. average gate power
3
I
GM
Max. peak gate current
3
A
-V
GM
Max. peak negative
gate voltage
V
GT
Max. gate voltage
4.0
TJ = - 40°C
required to trigger
2.5
TJ = 25°C
1.7
TJ = 125°C
I
GT
Max. gate current
270
TJ = - 40°C
required to trigger
150
mA
TJ = 25°C
80
TJ = 125°C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
0.25
V
6mA
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
W
V
10
T
J = 125
o
C,
rated VDRM applied
T
J = 125
o
C,
rated V
DRM applied
Parameters
IRK.105
Units
Conditions
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
Parameters
IRK.105
Units
Conditions
Sine half wave conduction
Rect. wave conduction
Devices
Units
180o
120o
90o
60o
30o
180o
120o
90o
60o
30o
IRK.105
0.04
0.05
0.06
0.08
0.12
0.03
0.05
0.06
0.08
0.12
°C/ W
ΔR Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Document Number: 94416
www.vishay.com
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRKT106/14P | 235 A, 1400 V, SCR, TO-240AA |
| IRKT106/16P | 235 A, 1600 V, SCR, TO-240AA |
| IRKT106/16S90P | 235 A, 1600 V, SCR, TO-240AA |
| IRKT26-10 | 39.25 A, 1000 V, SCR, TO-240AA |
| IRKT41-10 | 62.8 A, 1000 V, SCR, TO-240AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRKT106-16 | 制造商:n/a 功能描述:Dual SCR Power Module |
| IRKT10AS90 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:ADD-A-pak-TM GEN V Power Modules |
| IRKT12AS90 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:ADD-A-pak-TM GEN V Power Modules |
| IRKT132-04 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|130A I(T) |
| IRKT132-06 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|130A I(T) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。