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參數(shù)資料
| 型號： | IRKT105/12P |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 235 A, 1200 V, SCR, TO-240AA |
| 封裝： | LEAD FREE, ADD-A-PAK-7 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 232K |
| 代理商： | IRKT105/12P |
IRK.105..P Series
Bulletin I27215 01/07
I
T(AV)
Max. average on-state
current (Thyristors)
180o conduction, half sine wave,
I
F(AV)
Max. average forward
T
C = 85
o
C
current (Diodes)
I
O(RMS
) Max. continuous RMS
on-state current.
As AC switch
I
TSM
Max. peak, one cycle
1785
t =10ms
No voltage
or
non-repetitive on-state
1870
t =8.3ms reapplied
I
FSM
or forward current
1500
t =10ms
100% V
RRM
1570
t =8.3ms reapplied
2000
t =10ms
T
J = 25
o
C,
2100
t =8.3ms no voltage reapplied
I2t
Max. I2t for fusing
15.91
t =10ms
No voltage
14.52
t =8.3ms reapplied
11.25
t =10ms
100% V
RRM
10.27
t =8.3ms reapplied
20.00
t =10ms
T
J = 25
o
C,
18.30
t =8.3ms no voltage reapplied
I2
√t
Max. I2
√t for fusing (1)
159.1
KA2
√s
t =0.1to10ms,no voltage reappl. TJ=TJ max
V
T(TO) Max. value of threshold
0.80
Low level (3)
voltage (2)
0.85
High level (4)
r
t
Max. value of on-state
2.37
Low level (3)
slope resistance (2)
2.25
High level (4)
V
TM
Max. peak on-state or
I
TM = π x IT(AV)
V
FM
forward voltage
I
FM = π x IF(AV)
di/dt
Max. non-repetitive rate
T
J = 25
o
C, from 0.67 V
DRM,
of rise of turned on
150
A/μsI
TM =π x IT(AV), I
g = 500mA,
current
tr < 0.5 μs, tp > 6 μs
I
H
Max. holding current
250
T
J = 25
o
C, anode supply = 6V,
mA
resistive load, gate open circuit
IL
Max. latching current
400
TJ=25oC,anode supply=6V,resistive load
Parameters
IRK.105
Units
Conditions
On-state Conduction
Initial T
J = TJ max.
A
KA2s
V
m
Ω
1.64
V
or
I
(RMS)
I
(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
VRRM , maximum
VRSM, maximum
VDRM , max. repetitive
IRRM
Voltage
repetitive
non-repetitive
peak off-state voltage,
IDRM
Code
peak reverse voltage peak reverse voltage
gate open circuit
130°C
-V
V
mA
04
400
500
400
06
600
700
600
08
800
900
800
IRK.105
10
1000
1100
1000
20
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
Sinusoidal
half wave,
Initial T
J = TJ max.
105
T
J = TJ max
TJ = TJ max
TJ = 25°C
(1) I2t for time t
x = I
2√t x √t
x
(2) Average power
= V
T(TO) x IT(AV) + rt x (IT(RMS))
2
(3) 16.7% x p x I
AV < I < p x IAV
(4) I > p x I
AV
Document Number: 94416
www.vishay.com
2
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRKT106/04 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|105A I(T) |
| IRKT106/04S90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|105A I(T) |
| IRKT106/06 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|105A I(T) |
| IRKT106/06S90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|105A I(T) |
| IRKT106/08 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|105A I(T) |
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