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IRK.F152.. Series
3
Bulletin I27093 rev. A 09/97
www.irf.com
T
J
Max. junction operating temperature range
- 40 to 125
°C
Tstg
Max. storage temperature range
- 40 to 150
RthJC
Max. thermal resistance, junction to
0.17
K/W
Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to
0.035
K/W
Mounting surface flat and greased
heatsink
Per module
T
Mounting torque ± 10%
IAP to heatsink
4 - 6 (35 - 53)
Nm
busbar to IAP
4 - 6 (35 - 53)
(lb*in)
wt
Approximate weight
500 (17.8)
g (oz)
dv/dt
Maximum critical rate of rise of off-state
1000
V/s
T
J
= 125°C., exponential to = 67% V
DRM
voltage
V
INS
RMS isolation voltage
3000
V
50 Hz, circuit to base, T
J = 25°C, t = 1 s
I
RRM
Maximum peak reverse and off-state
30
mA
T
J = 125°C, rated VDRM/VRRM applied
I
DRM
leakage current
Parameter
IRK.F152..
Units Conditions
Blocking
di/dt
Maximum non-repetitive rate of rise
800
A/s
Gate drive 20V, 20
, tr ≤ 1ms, V
D
= 80% V
DRM
T
J
= 25°C
t
rr
Maximum recovery time
2
s
I
TM = 350A, di/dt = -25A/s, VR = 50V, TJ = 25°C
t
q
Maximum turn-off time
L
I
TM = 350A, TJ = 125°C, di/dt = -25A/s,
15
s
V
R
= 50V, dv/dt = 400V/s linear to 80% V
DRM
Parameter
IRK.F132..
Units Conditions
Switching
Parameter
IRK.F152..
Units Conditions
Triggering
P
GM
Maximum peak gate power
60
W
f = 50 Hz, d% = 50
P
G(AV)
Maximum peak average gate power
10
W
T
J
= 125°C, f = 50Hz, d% = 50
I
GM
Maximum peak positive gate current
10
A
T
J
= 125°C, tp < 5ms
- V
GM
Maximum peak negative gate voltage
5
V
I
GT
Max. DC gate current required to trigger
200
mA
T
J = 25°C, Vak
12V, Ra = 6
V
GT
DC gate voltage required to trigger
3
V
I
GD
DC gate current not to trigger
20
mA
T
J = 125°C, rated VDRM applied
V
GD
DC gate voltage not to trigger
0.25
V
Parameter
IRK.F132..
Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound