參數(shù)資料
型號(hào): IRKL71
廠商: International Rectifier
英文描述: THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
中文描述: 晶閘管/二極管和晶閘管/晶閘管
文件頁(yè)數(shù): 3/10頁(yè)
文件大小: 319K
代理商: IRKL71
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
3
www.irf.com
I
RRM
I
DRM
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
of off-state voltage (5)
T
= 125
o
C, linear to 0.67 V
DRM
,
gate open circuit
T
J
Junction operating
temperature range
Storage temp. range
T
stg
R
thJC
- 40 to 125
Max. internal thermal
resistance, junction
to case
Typical thermal resistance
case to heatsink
Mounting torque ± 10%
0.165
0.135
Per module, DC operation
R
thCS
T
to heatsink
busbar
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
15
mA
T
J
= 125
o
C, gate open circuit
Thermal and Mechanical Specifications
500
V/
μ
s
Parameters
IRK.71
IRK.91
Units
Conditions
- 40 to 125
0.1
5
Triggering
Blocking
(5) Available with dv/dt = 1000V/
μ
s, to complete code add S90 i.e. IRKT91/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
K/W
Nm
Mounting surface lat, smooth and greased
V
INS
RMS isolation voltage
V
P
GM
P
G(AV)
Max. average gate power
I
GM
Max. peak gate current
-V
GM
Max. peak negative
gate voltage
Max. peak gate power
12
12
3.0
3.0
3.0
3.0
A
V
GT
required to trigger
Max. gate voltage
4.0
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
2.5
1.7
270
150
80
I
GT
Max. gate current
required to trigger
mA
V
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
I
GD
Parameters
IRK.71
IRK.91
Units
Conditions
0.25
V
6
mA
W
V
10
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
°C
Parameters
IRK.71
IRK.91
Units
Conditions
Sine half wave conduction
Rect. wave conduction
Devices
Units
180
o
0.06
0.04
120
o
0.07
0.05
90
o
0.09
0.06
60
o
0.12
0.08
30
o
0.18
0.12
180
o
0.04
0.03
120
o
0.08
0.05
90
o
0.10
0.06
60
o
0.13
0.08
30
o
0.18
0.12
IRK.71
IRK.91
°C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
相關(guān)PDF資料
PDF描述
IRKL91 THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKT71-04A THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKT71-04AS90 THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKT71-06A THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKT71-06AS90 THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
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