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參數(shù)資料
| 型號(hào)： | IRK430 |
| 廠商： | International Rectifier |
| 英文描述： | SUPER MAGN-A-PAK⑩ Power Modules |
| 中文描述： | 超磁共振-甲-巴基斯坦⑩電源模塊 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 137K |
| 代理商： | IRK430 |
IRK.430.. Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
RRM
, maximum repetitive
peak reverse voltage
V
RSM
, maximum non-
repetitive peak rev. voltage
I
RRM
max.
@ T
J
= T
J
max.
mA
Type number
Code
V
V
16
1600
1700
IRK.430..
18
1800
1900
100
20
2000
2100
I
T(AV)
I
F(AV)
I
T(RMS)
I
TSM
I
FSM
Maximum average on-state current
@ Case temperature
430
82
A
°C
180° conduction, half sine wave
Maximum RMS on-state current
877
A
180° conduction, half sine wave @ T
C
= 82°C
t = 10ms
No voltage
Maximum peak, one-cycle,
15.7
KA
non-repetitive surge current
16.4
t = 8.3ms
reapplied
13.2
t = 10ms
100% V
RRM
reapplied
13.8
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
1232
KA
2
s
t = 10ms
No voltage
Initial T
J
= T
J
max.
1125
t = 8.3ms
reapplied
871
t = 10ms
100% V
RRM
reapplied
795
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
12320
KA
2
√
s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold voltage
0.96
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
I
pk
= 1500A, T
J
= 25°C, t
p
= 10ms sine pulse
V
T(TO)2
High level value of threshold voltage
r
t1
Low level value of on-state slope resistance
1.06
0.51
m
r
t2
V
TM
V
FM
High level value of on-state slope resistance
0.45
Maximum on-state or forward
voltage drop
1.65
V
I
H
I
L
Maximum holding current
500
mA
T
J
= 25°C, anode supply 12V resistive load
Typical latching current
1000
Parameter
IRK.430..
Units Conditions
On-state Conduction
di/dt
Maximum rate of rise of turned-on
1000
A/μs
T
J
= T
J
max., I
TM
= 400A, V
DRM
applied
current
t
d
Typical delay time
2.0
μs
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 750A, T
J
= T
J
max, di/dt = -60A/μs,
V
R
= 50V, dv/dt = 20V/μs, Gate 0 V 100
t
q
Typical turn-off time
200
μs
Parameter
IRK.430..
Units
Conditions
Switching
Next Data Sheet
Index
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