參數(shù)資料
型號: IRIS-G6651
廠商: International Rectifier
英文描述: IRIS-G6651 is a hybrid IC consists from power MOSFET and a controller IC
中文描述: 虹膜G6651是一種混合集成電路組成的功率MOSFET和控制器IC
文件頁數(shù): 3/7頁
文件大小: 272K
代理商: IRIS-G6651
www.irf.com
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25
, Vin=18V,unless otherwise specified)
MIN
14.4
9
-
-
45
TYP
16
10
-
-
-
MAX
17.6
11
30
100
55
V
in(ON)
V
in(OFF)
I
in(ON)
I
in(OFF)
T
OFF(MAX)
Maximum OFF time
Minimum time for input of quasi
resonant signals *6
T
OFF(MIN)
Minimum OFF time *7
Vth(1)
O.C.P/F.B Pin threshold voltage 1
Vth(2)
O.C.P/F.B Pin threshold voltage 2
I
OCP/FB
O.C.P/F.B Pin extraction current
V
in(OVP)
O.V.P operation voltage
I
in(H)
V
in(La.OFF)
Latch circuit release voltage *8
Tj
(TSD)
Thermal shutdown operating temperature
Operation start voltage
Operation stop voltage
Circuit current in operation
Circuit current in non-operation
V
V
Vin=0
17.6V
Vin=17.6
9V
-
Vin=14V
-
mA
μA
μsec
Tth(2)
-
-
-
-
1
μsec
μsec
V
V
mA
V
μA
-
-
-
1.5
0.78
1.6
1.5
24.5
400
0.68
1.3
1.2
20.5
-
0.73
1.45
1.35
22.5
-
-
Vin=0
24.5
V
6.6
140
-
-
8.4
-
V
Vin=24.5
6.6V
-
Latch circuit sustaining current *8
Definition
Symbol
Vin=24.5
8.5V
Ratings
Units
Test
Conditions
Electrical Characteristics (for MOSFET)
(Ta=25
) unless otherwise specified
MIN
TYP
MAX
ID=300μA
V3
-2
=0V(short)
V
DS
=650V
V3-2=0V(short)
V3-2=10V
I
D
=0.9A
-
tf
Switching time
-
-
250
nsec
Between channel and
internal frame
300
-
2.4
/W
-
θ
ch-F
-
-
Thermal resistance
Symbol
μA
On-resistance
R
DS(ON)
-
-
3.9
Ω
Drain leakage current
I
DSS
V
DSS
650
-
-
Ratings
Units
Test Conditions
Drain-to-Source breakdown voltage
V
Definition
IRIS-G6651
*6 Recommended operating conditions
Time for input of quasi resonant signals
For the quasi resonant signal inputted to OCP/FB Pin
at the time of quasi resonant operation, the signal shall
be wider than Tth(2).
*7 The minimum OFF time means T
OFF
width at the time when the minimum quasi resonant signal is inputted.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
Vth(2)
O.C.P/F.B
Tth(2)
1.0
μ
sec
0V
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