- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384504 > IRHSNA54064 (International Rectifier) RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) PDF資料下載
參數(shù)資料
| 型號： | IRHSNA54064 |
| 廠商： | International Rectifier |
| 英文描述： | RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
| 中文描述： | 抗輻射同步整流表面貼裝系統(tǒng)（SMD - 2） |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 114K |
| 代理商： | IRHSNA54064 |
IRHSNA57064
www.irf.com
3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-
tions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHSNA57064, IRHSNA53064 and IRHSNA54064
2. Part number IRHSNA58064
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Kr
39.2
300 37.4 60 60 60 52 34
Xe
63.3
300 29.2 46 46 35 25 15
Au
86.6
2068 106 35 35 27
LET
Energy Range
V
DS
(V)
20
14
0
10
20
30
40
50
60
70
0
-5
-10
-15
-20
VGS
V
Kr
Xe
Au
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 60 — 60 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 25 μA
R
DS(on)
Static Drain-to-Source
— 6.1 — 7.1
m
V
GS
= 12V, I
D
=45A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 5.6 — 6.5
m
V
GS
= 12V, I
D
=45A
On-State Resistance (SMD-2)
V
SD
Diode Forward Voltage
— 1.3 — 1.3 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=48V, V
GS
=0V
V
GS
= 0V, IS = 45A
⑦
⑦
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHSNA57064 | RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
| IRHSNA58064 | RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
| IRIS-A6331 | INTEGRATED SWITCHER |
| IRIS-A6372 | INTEGRATED SWITCHER |
| IRIS-F6426S | INTEGRATED SWITCHER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHSNA54Z60 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 30V N-CHANNEL |
| IRHSNA57064 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 75A 3SMD-2 - Rail/Tube |
| IRHSNA57064SCS | 制造商:International Rectifier 功能描述:TRANSISTOR - Bulk |
| IRHSNA57064SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSNA57Z60 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 30V N-CHANNEL |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。